Solvothermal synthesis and enhanced visible light photocatalytic activity of novel graphitic carbon nitride–Bi 2 MoO 6 heterojunctions

Facile synthesis of Z-scheme graphitic-C3N4/Bi2MoO6 nanocomposite for enhanced visible photocatalytic properties

“…The Z-scheme semiconductor nanocomposites exhibit better photocatalytic activity than single semiconductor for the well separation of electrons and holes and also reduction of their recombination. To further improve the photoactivity of g-C 3 N 4 , researchers have coupled g-C 3 N 4 with other inorganic semiconductors, such as, BiVO 4 /g-C 3 N 4 [22], g-C 3 N 4 /Bi 2 MoO 6 [23], g-C 3 N 4 /Bi 2 WO 6 [24], g-C 3 N 4 /MoO 3 [25], SnO 2-x /g-C 3 N 4 [26], WO 3 /g-C 3 N 4 [27], Bi 2 O 3 /g-C 3 N 4 [28], g-C 3 N 4 /Au/CdS [29]. [33], and Ag 2 CO 3 /Ag/AgBr [34].…”

One-dimensional Bi2MoO6 nanotubes: controllable synthesis by electrospinning and enhanced simulated sunlight photocatalytic degradation performances

“…The 731 cm -1 mode was attributed to the asymmetric stretching mode of MoO 6 involving vibrations of the equatorial oxygen atoms, and the band at 562 cm -1 corresponds to the bending vibration of MoO 6 . The band at 450 cm -1 is assigned to the stretching and bending vibrations of BiO 6 octahedra (Li et al 2014a;Tian et al 2014). No characteristic peaks of impurity were observed, indicating that all the organic molecules could be completely removed from the precursor nanofibers after calcination at 500°C for 2 h, and the inorganic Bi 2 MoO 6 nanotubes were obtained.…”

“…8). The conduction band (CB) of Bi 2 MoO 6 at the point of zero charge can be calculated by the following empirical equation (Jiang et al 2008): E CB = X -E C -0.5E g , where E C is the energy of free electron on the hydrogen scale (about 4.5 eV), E g is the band gap of the semiconductor, and X is the absolute electronegativity of the semiconductor, expressed as the geometric mean of the absolute electronegativity of all atoms in compounds, which is defined as the arithmetic mean of the first ionization energy and the atomic electron affinity (for Bi 2 MoO 6 , X is 6.129 eV) (Tian et al 2014). Therefore, based on the experimental results, E CB values of c-Bi 2 MoO 6 and c 0 -Bi 2 MoO 6 are calculated to be 0.269 and 0.304 eV, respectively.…”

Synthesis of one-dimensional α-Fe2O3/Bi2MoO6 heterostructures by electrospinning process with enhanced photocatalytic activity

“…where E C is the energy of free electron on the hydrogen scale (about 4.5 eV), E g is the band gap of the semiconductor and X is the absolute electronegativity of the semiconductor, expressed as the geometric mean of the absolute electronegativity of all atoms in compounds, which is defined as the arithmetic mean of the first ionization energy and the atomic electron affinity (for Bi 2 MoO 6 and a-Fe 2 O 3 , X is 6.13 and 4.78 eV, respectively) [28,29]. So E CB and E VB of g-Bi 2 MoO 6 were calculated to be 0.24 and 3.02 eV, respectively.…”