Solution‐Processed Organic Light‐Emitting Transistors Incorporating Conjugated Polyelectrolytes

Abstract

Improved performance of p‐type organic light‐emitting transistors (OLETs) is demonstrated by introducing a conjugated polyelectrolyte (CPE) layer and symmetric high work function (WF) source and drain metal electrodes. The OLET comprises a tri‐layer film consisting of a hole transporting layer, an emissive layer, and a CPE layer as an electron injection layer. The thickness of the CPE layer is critical for achieving good performance and provides an important structural handle for consideration in future optimization studies. We also demonstrate for the first time, good performance solution‐processed blue‐emitting OLETs. These results further demonstrate the simplification of device fabrication and improved performance afforded by integrating CPE interlayers into organic optoelectronic devices.

Highly Emissive Semi-Ladder-Type Copolymers, Aggregation State, and Solution-Processed Organic Light-Emitting Transistor

“…Methanol was used as the solvent for PFN + BIm 4 – to avoid dissolution of the emissive layer underneath. As demonstrated before, the thickness of PFN + BIm 4 – plays an important role in the performance of OLET . After both the concentration and the spin-rate of PFN + BIm 4 – were optimized, it was found that PFN + BIm 4 – with a thickness lower than 10 nm is optimal in our OLET devices.…”

Hybrid ZnON–Organic Light Emitting Transistors with Low Threshold Voltage <5 V

“…These results demonstrate a significantly decreased V th below5 V and are comparable to LETs based on SiN x high‐κ dielectrics . Furthermore, the EQE improved by a factor of 100 compared to OLETs with organic transport layers . This study provides valuable information about the role of S–D electrode WFs in HLETs, which is valuable for the future development of LETs and related optoelectronic devices.…”

Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

“…In summary, we have demonstrated a polymer-based p-type LEFET in a heterostructure device architecture with hole mobility approaching 2.1 cm 2 V −1 s −1 and a current ON/OFF >10 6 . The incorporation of the Mo 2 O 3 interlayer between the polymer leads to superior operating characteristics including an EQE of 1.6% at a luminance of 2600 cd m −2 and, more importantly, a large area, uniform, and stable light emission under the entire drain electrode.…”