Solution‐Processed Organic–Inorganic Perovskite Field‐Effect Transistors with High Hole Mobilities

Abstract

A very high hole mobility of 15 cm V s along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoO hole-injection layers.

Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field‐Effect Transistors

“…In this point of view, MHP‐FETs should have been widely investigated and significantly improved because of the superior optoelectronic properties of MHPs, cheap and scalable fabrication process. However, reliable room‐temperature operated MHP‐FETs are still relatively rare mainly because of the ion‐screening effect at the perovskite/dielectric interface . In this section, we will summarize the MHP‐FET investigations in the past several years and discuss the strategies to improve MHP‐FET performance.…”

“…Figure a demonstrates the schematic illustration of a BC/BG PEASnI 4 transistor with enlarged illustration of the PEASnI 4 film grown on a layer of NH 3 I‐SAM with an interlayer spacing of 16.4 Å. The reported XRD analysis indicates that the alternating inorganic and organic sheets are parallel to the substrate, which can facilitate the charge carrier transport . The corresponding output and transfer characteristics are shown in Figure b,c, exhibiting negligible hysteresis.…”

“…The calculated hole trap depth ranges from 0.1 to 0.7 eV, and the hole trap sheet density N t is correlated to the area under the TSC peaks. The lowest N t is obtained from the transistor in the TC/TG configuration with the SAM‐treatment, which is probably resulted from the reduced crystalline boundaries and structural distortion …”

“…d) TSC profiles of BC/BG and TC/TG transistors with and without the SAM. Reproduced with permission . Copyright 2016, Wiley‐VCH.…”

Полевые транзисторы с высокой подвижностью и малым гистерезисом передаточных характеристик на основе пленок CH-=SUB=-3-=/SUB=-NH-=SUB=-3-=/SUB=-PbBr-=SUB=-3-=/SUB=-

“…С другой стороны, значения µ hole (300 ) ∼ 0.6, 2.6, и ∼ 0.78 cm 2 /Vs были получены для 2D-пленок металлорганических перов-скитов (C 6 H 5 C 2 H 4 NH 3 ) 2 SnI 4 , нанесенных на подлож-ки методом центрифугирования [10] и напылением в вакууме [11] соответственно. Недавно рекордные зна-чения µ hole ∼ 15 cm 2 /Vs при 300 K с незначительным гистерезисом вольт-амперных характеристик (ВАХ) бы-ли получены в ПТ на основе (C 6 H 5 C 2 H 4 NH 3 ) 2 SnI 4 при предварительном нанесении на подложки монослоя самоорганизующихся молекул, содержащих концевые группы иодида аммония (NH 3 I−SAM) [12]. Возможными источниками относительно низких значений µ hole и µ elec наблюдаемых в перовскитовых ПТ, являются невысо-кое качество пленок металлорганических перовскитов, высокая плотность ловушек и неэффективная инжекция носителей заряда.…”