2018
Solution‐Processed Metal Oxide Nanocrystals as Carrier Transport Layers in Organic and Perovskite Solar Cells
Abstract: There has been rapid progress in solution-processed organic solar cells (OSCs) and perovskite solar cells (PVSCs) toward low-cost and highthroughput photovoltaic technology. Carrier (electron and hole) transport layers (CTLs) play a critical role in boosting their efficiency and long-time stability. Solution-processed metal oxide nanocrystals (SMONCs) as a promising CTL candidate, featuring robust process conditions, low-cost, tunable optoelectronic properties, and intrinsic stability, offer unique advantages …
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Cited by 138 publications
(94 citation statements)
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“…The band position levels versus RHE can be converted into the standard vacuum energy potential by approximately assuming that E RHE ≈ − E Vacuum – 0.45. , Thus, we obtained the band positions of our synthesized Co 3 O 4 with respect to the vacuum energy level, as depicted in Figure d. Compared with the band position values of the wide bandgap MAPbI 3 as well as the low bandgap MASnI 3 from the literature, we find that our synthesized p-type Co 3 O 4 has suitable band positions for function as a hole transport material to extract and transport the hole carriers from organometallic perovskites in solar cells …”
Section: Resultsmentioning
confidence: 54%
“…The band position levels versus RHE can be converted into the standard vacuum energy potential by approximately assuming that E RHE ≈ − E Vacuum – 0.45. , Thus, we obtained the band positions of our synthesized Co 3 O 4 with respect to the vacuum energy level, as depicted in Figure d. Compared with the band position values of the wide bandgap MAPbI 3 as well as the low bandgap MASnI 3 from the literature, we find that our synthesized p-type Co 3 O 4 has suitable band positions for function as a hole transport material to extract and transport the hole carriers from organometallic perovskites in solar cells …”
Section: Resultsmentioning
confidence: 54%
“…Meanwhile, the transmission electron microscopy (TEM) and selected area electron diffraction characterization were conducted, and the results are shown in Figure b, the Sn-doped In 2 O 3 NPs synthesized by our low-temperature strategy show a high crystallinity and small size distribution. The average size of Sn:In 2 O 3 NPs is about 10 nm, as shown in Figure c, which is beneficial to form high-quality top ETLs with good physical contact on the perovskite surface, thereby efficiently promoting charge collection in PSCs. , Remarkably, through simple room-temperature spin-coating methods, compact and uniform Sn:In 2 O 3 and In 2 O 3 films are formed on the perovskite surface, as confirmed from the top-view scanning electron microscopy (SEM) image of the structure indium tin oxide (ITO)/hole transport layer (HTL)/perovskite/Sn:In 2 O 3 in Figure S1. Consequently, In 2 O 3 and Sn:In 2 O 3 NPs are successfully synthesized and both of them can form high-quality oxide films on perovskite films by a simple room-temperature solution approach.…”
Section: Results
and Discussionmentioning
confidence: 79%
“…As the same as ZnO, the properties of TiOx can be adjusted by doping. 204 As shown in Figure 6A, Nb doped TiO 2 boosted higher PCE and reduced hysteresis. 158 Additional electron in Nb 5+ compared with Ti 4+ enabled higher electron mobility.…”
Section: Binary Metal Oxides and Their Modificationmentioning
confidence: 81%
