narrowband photodetection, only narrowband optical spectra are required, whereas the background noise signal caused by the photon wavelength beyond the narrowband must be suppressed. Thus, the spectral rejection ratio narrowband spectral response wide spectra response 100% × is an important parameter for describing the ability of photodetectors to discriminate narrowband photons from those of wide spectra. [12][13][14][15] Typically, narrowband photodetectors rely on a combination of bulky optical filters and broadband photodetectors, which impede their less costly fabrication and miniaturization. [16,5,15] Hence, the development of nonopticalfilter narrowband photodetectors is important to miniaturization.Recently, the use of nonoptical-filter narrowband photodetectors made of MAPbX 3 perovskites have been reported in two main structures. The first is the vertical Schottky structure of Au/ MAPbX 3 perovskite single crystals (PSCs)/ (FTO,Ga), which is highly dependent on defect density differences between the MAPbX 3 PSC surface and the inside of the MAPbX 3 PSC bulk. [17,18,6,19] Owing to surface charge recombination, a surface with high density of traps can absorb short-wavelength photons, whereas the charges Narrowband photodetection provides important information in a specific wavelength range. Specially, the use of nonoptical-filter narrowband photodetectors based on MAPbX 3 (MA = CH 3 NH 3 ; X = Cl, Br, I) perovskites is reported of great potential. However, current MAPbX 3 -based narrowband photodetectors have to sacrifice their photocurrent and response speed to achieve an acceptable spectral rejection ratio. In this work, a new type of heterojunction photodetector (hetero-PD) with a structure of (n-type doped MAPbCl 3 )/(intrinsic MAPbBr 2.5 Cl 0.5 )/(n-type doped MAPbBr 3 ) via epitaxial growth is demonstrated as a narrowband photodetector. Through optical bandgap engineering, photons with different wavelength can be absorbed in different layers. Owing to the n-i-n energy band structure, most external bias would apply on a tiny region near the n-i heterojunction. Besides, the energy barriers in the heterojunctions can block holes from injection and collection, resulting in low-noise electron-only hetero-PDs. By sufficiently suppressing the background noise from short-wavelength photons, hetero-PDs are capable of achieving a high spectral rejection ratio of 98.1% under an electrical field of 8 V cm −1 . Moreover, hetero-PDs exhibit a high external quantum efficiency value of 45%, a narrow full width at half-maximum of 13 nm, and a response time of 1.35 µs.