Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature

Ion-Beam-Induced Epitaxial Recrystallization Method and Its Recent Applications

“…It was inferred that the electronic excitations and ionizations play practically no role in the recrystallization process Williams et al, 1985). In other experiments, in which a-Si layers were irradiated by the electron-beam, the recrystallization was observed only for energies above a threshold for atomic displacement of ~ 150 keV while below this threshold no epitaxial regrowth was produced, even after irradiation at very high electron doses (Lulli et al, 1987;Miyao et al, 1986;Washburn et al, 1983). Therefore, the observed epitaxy is associated with elastic collisions that transfer sufficient momentum to displace target atoms from their lattice site.…”

Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope

“…The fundamental role of elastic displacement in the mechanism of particle-induced crystallization has been demonstrated both for ion-beam annealing (IBA) Holmdn 1986, Brown et al 1987) and for SPE of implanted Si layers obtained by in situ electron irradiation at room temperature inside a transmission electron microscope (Lulli et al 1987(Lulli et al , 1988. A transition from SPE to amorphization at the a-c interface, resulting in 'epitaxial' growth of the amorphous phase, is observed under ion irradiation, when the temperature is decreased below a critical value which depends on the dose rate Brown 1987, Brown et al 1987).…”

“…In situ electron-beam irradiation were performed in a CM-30 Philips electron microscope equipped with a system for the measurement of beam current density similar to that already described by Lulli et al (1987). The irradiation procedure was that described in the same work.…”

Effect of Al addition on the crystallization of a-AlxSi1−x (0.025⩽x⩽0.100) by electron-beam irradiation

“…Electron-beam irradiating techniques have been applied to the fabrication of NWs as well as nano-dots. In addition to e-beam lithography, electron-beam irradiation also enables nanostructures to be individually formed at particular sites where the electron-beam is irradiated by electronbeam induced chemical vapor deposition (EB-CVD); a focused electron-beam was probed at a particular region of the specimen surface on which certain chemicals are adsorbed, and the resultant chemical reaction and/or phase variation may lead to the formation of nano-scale nanostructures at the irradiated spot [3,4].…”