Solid-phase crystallization of ultra high growth rate amorphous silicon films

Abstract

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The influence of overconstraint on the spatial distribution of mobility in an amorphous network J. Chem. Phys. 135, 194505 (2011) Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system J. Appl. Phys. 110, 023709 (2011) Electrostatic charging and charge transport by hydrated amorphous silica under a high voltage direct current electrical field J. Chem. Phys. 134, 214703 (2011) Additional information on J. Appl. Phys. In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain ($1.5 lm) polycrystalline silicon was obtained after SPC of high growth rate ($25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. V C 2012 American Institute of Physics.

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

“…A measure for the film crystallinity X c as a function of annealing time has been obtained from the XRD scans by comparing the sum of the peak areas I hkl to the sum of the peak areas I hkl ,max of a fully crystallized film :…”

The effect of film tensile stress on crystallite nucleation and growth in thermally annealed a-Si:H

“…In this model, r n and s g are assumed to be time independent after the onset of nucleation and enable a determination of the final grain size. While some differences in final grain size have been reported and have been attributed largely to variations in r n , one of the most striking observations for thermally annealed a-Si:H films has been the wide range in s o , with values extending from less than 1 h to as long as 10-15 h at an anneal temperature of 600 C. [10][11][12][13][14][15][16] Various reasons have been proposed to explain this large variation, including variations in the film H content. Based upon a structural model in which the local film inhomogeneity is defined by the initial H distributions in the as grown films, a recent report 15 proposed that nucleation center sites were the more well ordered regions in the films that did not contain clustered H sites, as probed by H NMR spectroscopy, and that the frequency and sizes of these sites directly controlled the film s o .…”

Recent progress in low-temperature-process monolithic three dimension technology

“…Most of research studies focus on improving the poly-Si quality and increasing the grain size to minimize the effect of the gain boundary using low-temperature or lowthermal budget processes, e.g., solid-phase crystallization (SPC, T sub ∼ 700 °C), [16][17][18][19] metal-induced crystallization (MIC, T sub ∼ 500 °C), [20][21][22][23] laser crystallization (LC, T sub < 400 °C), [24][25][26] and flash lamp annealing (FLA) 27) . For instance, Murley et al reduced the thermal budget of TFTs by metal-induced lateral crystallization.…”

“…Several pioneer M3D research studies have been published these years with the development of low-temperature= thermal budget processes. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] For sequentially stackable channel fabrication, we can simply divide research studies into two branches, namely, direct active layer formation and active layer transfer on existing devices=circuits as illustrated in Fig. 1.…”