Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
125
0

Year Published

2017
2017
2022
2022

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 183 publications
(126 citation statements)
references
References 173 publications
1
125
0
Order By: Relevance
“…ZrO 2 , in particular, has been attracting increasing attention in recent years due to its processing simplicity and very high relative permittivity ( k = 25). [ 31,32 ] However, its relatively small band gap (≈5.8 eV) often results in higher leakage currents and adverse effects on device performance. A simple approach to overcome this issue is by using multilayer dielectrics.…”
Section: Resultsmentioning
confidence: 99%
“…ZrO 2 , in particular, has been attracting increasing attention in recent years due to its processing simplicity and very high relative permittivity ( k = 25). [ 31,32 ] However, its relatively small band gap (≈5.8 eV) often results in higher leakage currents and adverse effects on device performance. A simple approach to overcome this issue is by using multilayer dielectrics.…”
Section: Resultsmentioning
confidence: 99%
“…The film formation process is described in Figure 6 . After the precursor is spin-coated on the substrate, a solution layer is formed containing a large number of ions [ 6 ]. The solution layer has a certain thickness which has little dependency on the solution viscosity, surface tension, and concentration, because in the spin-coating process centrifugal force plays a dominant role.…”
Section: Resultsmentioning
confidence: 99%
“…Also, the breakdown electric field is necessary to those larger than 2 MV/cm to satisfy most operating conditions of the TFT device [ 3 ]. However, in most of the previous reports, solution-processed dielectric TFTs have had a large leakage current density under low operating voltage with a relatively low breakdown field [ 6 ].…”
Section: Introductionmentioning
confidence: 99%
“…The gate dielectric plays an important role in TFTs because it manipulates the conductance of the semiconducting channel by accumulating charge carriers. Moreover, its electrical insulation to minimize a leakage current is another critical requirement for minimal static dissipation [5], which simultaneously affects the transfer performance and the stability and lifetime of TFT devices.…”
Section: Introductionmentioning
confidence: 99%
“…Various vacuum preparation technologies (such as sputter deposition) have been used to prepare metal-oxide films. However, these methods require high-vacuum conditions and a photolithography patterning process that leads to high costs and cumbersome fabrication procedures [2,5,13,14]. To overcome these problems, alternative film-deposition methods have been proposed [15].…”
Section: Introductionmentioning
confidence: 99%