“…9 b, when positive voltage is applied across the device, copper cations are dissolved from the active electrode and conductive filaments are built towards the positively charged electrode. This mechanism is called electrometallization (ECM) and it is associated to active electrodes deployed in resistive switching devices 12 , 53 . Figure 9 I–V Switching mechanism associated to GO-based switching device fabricated with (a) noble electrodes (i.e.…”
Section: Resultsmentioning
confidence: 99%
“…MR device resistance can be changed in a nonvolatile way from one state (ON) to another (OFF) or vice versa. Such device has the potential to be deployed in many emerging applications such as neuromorphic, computing, memory, security and sensing 12 – 18 . Recently, RRAM switching ability has attracted researchers’ attention to be utilized in reconfigurable RF devices.…”
Adaptable communication systems are of great interest as they provide dynamic front end to accommodate the tunable spectrum management in advanced wireless systems. Memristor (acronym of memory resistor) is an emerging technology part of resistive RAM (RRAM) that has good potential for application in reconfigurable RF devices. The potentiality of using resistive switches for frequency tuning of high frequency RF filters is successfully explored in this article for the first time. Tunable RF filter is designed with detailed simulation using Ansys HFSS, and then correlated with measured results from experiment. As a proof of concept, a prototype of the tunable RF filter is fabricated by using a graphene oxide (GO) integrated with a conventional microstrip open stub notch filter. The resistor switching ability of the device is exploited for the frequency tuning. The resonating length of the notch filter is varied by changing the resistance of the active GO material between ‘HIGH’ (OFF) and ‘LOW’ (ON) resistance states. The measured results demonstrate the great potential of using RRAM in tunable RF devices. It also proves the possibility of tuning RF devices without any localized surface mount device (SMD) element or complex realization technique.
“…9 b, when positive voltage is applied across the device, copper cations are dissolved from the active electrode and conductive filaments are built towards the positively charged electrode. This mechanism is called electrometallization (ECM) and it is associated to active electrodes deployed in resistive switching devices 12 , 53 . Figure 9 I–V Switching mechanism associated to GO-based switching device fabricated with (a) noble electrodes (i.e.…”
Section: Resultsmentioning
confidence: 99%
“…MR device resistance can be changed in a nonvolatile way from one state (ON) to another (OFF) or vice versa. Such device has the potential to be deployed in many emerging applications such as neuromorphic, computing, memory, security and sensing 12 – 18 . Recently, RRAM switching ability has attracted researchers’ attention to be utilized in reconfigurable RF devices.…”
Adaptable communication systems are of great interest as they provide dynamic front end to accommodate the tunable spectrum management in advanced wireless systems. Memristor (acronym of memory resistor) is an emerging technology part of resistive RAM (RRAM) that has good potential for application in reconfigurable RF devices. The potentiality of using resistive switches for frequency tuning of high frequency RF filters is successfully explored in this article for the first time. Tunable RF filter is designed with detailed simulation using Ansys HFSS, and then correlated with measured results from experiment. As a proof of concept, a prototype of the tunable RF filter is fabricated by using a graphene oxide (GO) integrated with a conventional microstrip open stub notch filter. The resistor switching ability of the device is exploited for the frequency tuning. The resonating length of the notch filter is varied by changing the resistance of the active GO material between ‘HIGH’ (OFF) and ‘LOW’ (ON) resistance states. The measured results demonstrate the great potential of using RRAM in tunable RF devices. It also proves the possibility of tuning RF devices without any localized surface mount device (SMD) element or complex realization technique.
“…The principle of memristive sensorics is based on the dependency of the resistive switching on various external stimuli. This includes recording of mechanical energy (Vilmi et al, 2016 ), hydrogen detection (Hossein-Babaei and Rahbarpour, 2011 ; Strungaru et al, 2015 ; Haidry et al, 2017 ; Vidiš et al, 2019 ), γ-ray sensing (Abunahla et al, 2016 ), and various fluidic-based sensors, such as sensors for pH (Hadis et al, 2015a ) and glucose concentration (Hadis et al, 2015b ). In addition, TiO 2 thin films may generate photoinduced electron–hole pairs, which give rise to UV radiation sensors (Hossein-Babaei et al, 2012 ).…”
Section: Applicationsmentioning
confidence: 99%
“…The thickness of the TiO 2 layers obtained by this method typically ranges between 40 and 200 μm (Gale et al, 2014 ; Abunahla et al, 2018 ; De Carvalho et al, 2019 ). This thickness range does not match the usual topological features of RRAM memristors, although the method has recently been justified for various memristive sensors (Abunahla et al, 2016 , 2018 ; Sahu and Jammalamadaka, 2019 ).…”
Titanium dioxide (TiO
2
) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO
2
thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO
2
. Following a brief introduction, we provide an overview of the major areas of application of TiO
2
-based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.
“…The former set of techniques has the advantage of producing oxides free of substrate, hence they can be deposited on any substrate, including flexible ones [56][57][58]. Production of the oxides generally involves mild temperatures and ambient pressures in case of sol-gel [57,[59][60][61][62], or the use of a pressurized vessel, specific for hydrothermal treatments [63][64][65], which in all cases represent low-cost alternatives to low pressure, high-temperature chemical or physical deposition processes.…”
Section: Dependence Of Switching Behavior On Metal Oxide Characteristicsmentioning
Memristive devices generally consist of metal oxide elements with specific structure and chemical composition, which are crucial to obtain the required variability in resistance. This makes the control of oxide properties vital. While CMOS compatible production technologies for metal oxides deposition generally involve physical or chemical deposition pathways, we here describe the possibility of using an electrochemical technique, anodic oxidation, as an alternative route to produce memristive oxides. In fact, anodization allows to form a very large range of oxides on the surface of valve metals, such as titanium, hafnium, niobium and tantalum, whose thickness, structure and functional properties depend on process parameters imposed. These oxides may be of interest to build neural networks based on memristive elements produced by anodic oxidation.
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