Soft-switching SiC interleaved boost converter

Ahmed, Rishad; Calderon-Lopez, Gerardo; Bryan, F.; Todd, Rebecca; Forsyth, A.J.

doi:10.1109/apec.2015.7104462

Cited by 14 publications

(10 citation statements)

References 16 publications

(22 reference statements)

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“…The switching frequency of Si IGBT-based converters is normally limited to 20 kHz, but the switching frequency of SiC MOSFETs can reach 100 kHz in a hard-switching converter [78]. With soft switching, the switching frequency can be even higher [79]. However, increasing switching frequency is also increasingly inflicted with higher switching loss that can considerably compromise efficiency [80].…”

Section: B Heat Dissipationmentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum wires. In this article, low parasitic inductance and high-efficient cooling interconnection techniques for Si power modules, which are the foundation of packaging methods of SiC ones, are reviewed first. Then, attempts on developing packaging techniques for SiC power modules are thoroughly overviewed. Finally, scientific challenges in the packaging of SiC power module are summarized.

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Section: B Heat Dissipationmentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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“…The converter topology is a modification of the SAZZ dual‐interleaved boost converter with IPT [2] as shown in Fig. 1.…”

Section: Circuit Description and Operationmentioning

confidence: 99%

“…Soft‐switching techniques can remove most of the switching losses, and also have the potential to reduce EMI [1]. A soft‐switched SiC converter was proposed in [2] which combined the benefits of the dual‐interleaved boost converter and interphase transformer (IPT) with those of the snubber assisted zero‐voltage and zero‐current transition (SAZZ) converter. The prototype demonstrated a 50% reduction in switching losses compared with hard‐switched operation, and achieved 98% efficiency when operating at 12.5 kW, 112 kHz and 400 V.…”

Section: Introductionmentioning

confidence: 99%

Soft‐switching operation of the dual‐interleaved boost converter over all duty ratios

Ahmed

Todd

Forsyth

2017

IET Power Electronics

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Abstract:To extend the operating range of the snubber assisted zero-voltage and zero-current transition (SAZZ) dual-interleaved boost converter beyond its inherent soft-switching limit of D=0.5, a resonant pulse transformer is proposed instead of the resonant inductor. The 1:2 turns ratio of the transformer ensures full discharge of the snubber capacitor at all duty ratio values to facilitate zero-voltage zerocurrent switching (ZVZCS) at turn on of the main switching devices. The effectiveness of the topology has been confirmed by SPICE simulation and demonstrated by a 20 kW SiC MOSFET converter. The prototype operated at 20 kW, 112 kHz, 320-600V achieving 98.7% efficiency and achieved 98.2% efficiency at 6 kW. Taking the additional losses in the auxiliary circuit into account, the switching losses at 20 kW are reduced by 74% compared with hard-switching operation, representing a 54% reduction in overall losses.

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“…The load current, Idd goes through the MOSFET channel, so, Vds can be considered constant, Vds(on). After solving (1)-(3) using V g_in = V ggl and the initial condition, Vgs(0) = Vgg, the gate to source voltage can be found (11).…”

Section: Sub-period 1: (T4-t5) (Turn Off Delay Td(off))mentioning

confidence: 99%

“…Soft switching techniques can be employed to minimise the switching losses and a soft-switched SiC boost converter (12.5 kW, 112 kHz) was reported in [11] with an efficiency of around 98 %. However, the impact of the snubber branch on the switching waveforms needs to be investigated to fully evaluate the performance benefits, which is another capability of this analytical model.…”

Section: Introductionmentioning

confidence: 99%

Analysis of SiC MOSFETs under hard and soft-switching

Ahmed

Todd

Forsyth

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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Abstract-Analytical models for hard-switching and softswitching SiC MOSFETs and their experimental validation are described in this paper. The models include the high frequency parasitic components in the circuit and enable very fast, accurate simulation of the switching behaviour of SiC MOSFET using only datasheet parameters. The much higher switching speed of SiC devices over Si counterparts necessitates a clear detailed analysis. Each switching transient was divided into four distinct sub-periods and their respective equivalent circuits were solved to approximate the circuit state variables. Nonlinearities in the junction capacitances of SiC devices were considered in the model. Analytical modelling results were close to the LTspice simulation results with a threefold reduction in the simulation time. The effect of snubber capacitors on the soft-switching waveforms is also explained analytically and validated experimentally, which enables the analytical model to be used to evaluate future softswitching solutions. It was found that the snubber branch can significantly reduce the turn off ringing of the SiC MOSFET in addition to the reduction of switching losses.

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Soft-switching SiC interleaved boost converter

Cited by 14 publications

References 16 publications

Review of Packaging Schemes for Power Module

Review of Packaging Schemes for Power Module

Soft‐switching operation of the dual‐interleaved boost converter over all duty ratios

Analysis of SiC MOSFETs under hard and soft-switching

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