SnS thin film solar cells with Zn1−xMgxO buffer layers

Ikuno, Takashi; Suzuki, Ryō; Kitazumi, Kosuke; Takahashi, Naoko; Kato, Naohiko; Higuchi, Kenichi

doi:10.1063/1.4804603

Cited by 112 publications

(78 citation statements)

References 24 publications

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“…SnS-based solar cells in a superstrate configuration with Zn 1−x Mg x O (ZMO) as the buffer layer were prepared and the conduction band offset (CBO) was tuned by adjusting the Mg content in the ZMO. Solar cells with the optimum CBO value exhibited a conversion efficiency of 2.1% [49].…”

Section: Introductionmentioning

confidence: 99%

SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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Abstract:Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements) are still limiting their market diffusion. For this reason new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe 2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs). The sulfur loss represents one of the major challenges of SnS solar cell technology.

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Section: Introductionmentioning

confidence: 99%

SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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“…5 In recent years, the conversion efficiency of SnS-based solar cells has considerably improved from 1.3% to 4.36%. 1,[7][8][9][10][11] However, the record efficiency still pales in comparison to the theoretical maximum efficiency a of SnS, 32%. 12 As a step towards understanding the loss mechanisms at play, the present work focuses on the measurement and modeling of carrier collection and photocurrent in SnS devices.…”

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confidence: 99%

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

Chakraborty

Steinmann

Mangan

et al. 2015

Applied Physics Letters

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We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150°C to 240°C and then recovers at 285°C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the nonmonotonic behavior of charge-carrier collection can be explained by a transition from drift-to diffusionassisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285°C. These findings illustrate how coupled mechanisms can affect early-stage device development, highlighting the critical role of direct materials property measurements and simulation.

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“…Due to its direct bandgap it has a high absorption coefficient (a > 10 4 cm À1 ) in the visible range of the solar spectrum and therefore is considered to be an appropriate material for use as a photovoltaic absorber. [1][2][3] Thin films of SnS have been developed using various fabrication methods, such as chemical spray pyrolysis (CSP), 4-14 chemical bath deposition (CBD), [15][16][17][18] deep coating, 19 electrodeposition (ED), [20][21][22][23][24] spin coating (SC), 25 brush plating (BP), 26 successive ionic layer adsorption and reaction (SILAR), [27][28][29] vacuum thermal evaporation (VTE), [30][31][32] electron beam evaporation (EBE), 33 radiofrequency sputtering (RFS), 34 chemical vapor deposition (CVD), 35,36 atomic layer deposition (ALD), 37 pulsed laser deposition (PLD), 38 molecular beam epitaxy (MBE), 39 and multilayerbased solid-state reaction. 40 Their structural and physical properties have been well studied by various groups.…”

Section: Introductionmentioning

confidence: 99%

Junction and Back Contact Properties of Spray-Deposited M/SnS/In2S3/SnO2:F/Glass (M = Cu, Graphite) Devices: Considerations to Improve Photovoltaic Performance

Patel

Ray

2014

Journal of Elec Materi

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SnS/In 2 S 3 heterojunction devices were fabricated entirely by chemical spray pyrolysis in a superstrate configuration on SnO 2 :F/glass. The SnS/In 2 S 3 junction was found to exhibit strong rectification behavior, and the MottSchottky characteristics showed it was abrupt. The photovoltaic behavior of the junction was investigated under air mass 1.5G illumination, showing a short-circuit current of 4.8 mA/cm 2 and an open-circuit voltage of 0.29 V, reportedly the highest to date among similar devices with a Cd-free buffer layer and processed by a nonvacuum technique. However, the device suffers from low fill factor due to high series resistance originating from interface inhomogeneities. A Cu back contact was associated with a low level of inhomogeneities at the interface, as demonstrated by impedance analysis.

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SnS thin film solar cells with Zn1−xMgxO buffer layers

Cited by 112 publications

References 24 publications

SnS Thin Film Solar Cells: Perspectives and Limitations

SnS Thin Film Solar Cells: Perspectives and Limitations

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

Junction and Back Contact Properties of Spray-Deposited M/SnS/In2S3/SnO2:F/Glass (M = Cu, Graphite) Devices: Considerations to Improve Photovoltaic Performance

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