SnO₂‐in‐Polymer Matrix for High‐Efficiency Perovskite Solar Cells with Improved Reproducibility and Stability

Abstract

Understanding interfacial loss and the ways to improving interfacial property is critical to fabricate highly efficient and reproducible perovskite solar cells (PSCs). In SnO2‐based PSCs, nonradiative recombination sites at the SnO2–perovskite interface lead to a large potential loss and performance variation in the resulting photovoltaic devices. Here, a novel SnO2‐in‐polymer matrix (i.e., polyethylene glycol) is devised as the electron transporting layer to improve the film quality of the SnO2 electron transporting layer. The SnO2‐in‐polymer matrix is fabricated through spin‐coating a polymer‐incorporated SnO2 colloidal ink. The polymer is uniformly dispersed in SnO2 colloidal ink and promotes the nanoparticle disaggregation in the ink. Owing to polymer incorporation, the compactness and wetting property of SnO2 layer is significantly ameliorated. Finally, photovoltaic devices based on Cs0.05FA0.81MA0.14PbI2.55Br0.45 perovskite sandwiched between SnO2 and Spiro‐OMeTAD layer are fabricated. Compared with the averaging power conversion efficiency of 16.2% with 1.2% deviation for control devices, the optimized devices exhibit an improved averaging efficiency of 19.5% with 0.25% deviation. The conception of polymer incorporation in the electron transporting layer paves a way to further increase the performance of planar perovskite solar cells.

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO2 Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

“…The corresponding perovskite film on n‐doped PCBM/TiO 2 becomes smooth, where the root‐mean‐square surface roughness is 10.2 nm, in contrast to 20.8 nm of the perovskite film on the bare TiO 2 , see Figure S3 (Supporting Information). Such improvement in the morphology is related to the improved affinity of perovskite to n‐doped PCBM/TiO 2 . The perovskite precursor solution on PCBM/TiO 2 and n‐doped PCBM/TiO 2 produce the contact angles of 47.9° and 35.5°, respectively, indicating that the addition of n‐type dopant DMBI is beneficial to improve the affinity of perovskite to PCBM (Figure S4, Supporting Information).…”

Passivating Surface Defects of n‐SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

“…On the contrary, the n ‐SnO 2 /InP/ZnS QDs ETL based device showed an impressively high stability performance, the PCE can remain over 80% of its original efficiency after 500 h aging. The n ‐SnO 2 /InP/ZnS QDs based ETL has a very stable chemical structure, the presence of the ETL not only hinder the moisture and oxygen molecules absorbed on the ITO surface to diffuse into the ITO grain boundaries to increase resistance,43 but also hinder the diffusion of moisture and oxygen molecules into the above active layer,44 thus contributing to the high device stability in OSCs.…”

Machine learning in materials science

“…Many classification and regression algorithms can be applied to predict the chemical composition of a material from its structure . Perovskite is an important crystal structure in many fields . Shuaihua et al used various regression algorithms (Gradient boosting regression, kernel ridge regression [KRR], support vector regression, Gaussian process regression, DT regression, and multilayer perceptron regression) to predict stable lead‐free HOIPs from 5158 unexplored HOIPs and successfully identified six stable compounds (C 2 H 5 OInBr 3 , C 2 H 6 NInBr 3 , NH 3 NH 2 InBr 3 , C 2 H 5 OSnBr 3 , NH 4 InBr 3 , and C 2 H 6 NSnBr 3 ) .…”