Noncentrosymmetric
(NCS) metal-chalcogenides have emerged as a
candidate for infrared nonlinear optical (IR-NLO) materials, but it
remains an enormous challenge to achieve simultaneously a large second-harmonic-generation
(SHG) coefficient (d
ij
), strong laser-induced damage threshold (LIDT), wide phase-matching
(PM) range, and low melting point (MP) in a single material. Herein,
a novel ternary mixed-metal chalcogenide, Sn2Ga2S5, was prepared via a facile mid-temperature fluxing
method. It adopts a polar space group Pna21 (no. 33) and shows a distinctive 3D NCS network made by ∞
2[Ga2S5
4–] layers and ∞
1[Sn2S6
8–] chains via the sharing
of common corners. Significantly, Sn2Ga2S5 exhibits an excellent comprehensive performance for IR-NLO
applications that surpasses the current benchmark of AgGaS2, including a strong SHG response d
ij
(2.5 × AgGaS2), high LIDT (6.6
× AgGaS2), wide PM range (>725 nm), broad transparent
region (0.57–13.8 μm), and low MP (ca. 958 K). Furthermore,
the detailed theoretical calculation results elucidate that the strong d
ij
of Sn2Ga2S5 can be ascribed to the combined effect of two
asymmetric building motifs (ABMs), that is, dimeric [Sn2S6] and [Ga2S5] units. Such a systematic
work would provide some useful guidance for the prediction and discovery
of new IR-NLO chalcogenides with mixed ABMs.