Slurry Design for Chemical Mechanical Polishing

Abstract

Chemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi layer metallization. For an effective polishing, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate. These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or in other words, by engineering the slurry chemistry, particulate properties and stability. This paper reviews the impact of chemical, inter-particle and pad-particle-substrate interactions on CMP performance. It is shown that for consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions by providing sufficient pad-particle-wafer interactions.

Chemical-Mechanical Polishing of Optical Glasses

“…The glass polished in all three cases is BaK 4. Basim et al showed that this procedure works well for silica polishing suspensions [9]. Therefore it is used as reference glass.…”

The Cycle Characteristics of Slurries in Chemical Mechanical Polishing (CMP) of Fused Silica

“…During the cycle polishing process, the parameters such as pH, solid content, and particle morphology of the polishing slurry will vary with the cycle time, and these changes may greatly affect the MRR and Rq of the polished workpiece. Therefore, the cycle characteristics of the slurry need to be further studied, which can contribute to controlling particle property and slurry chemistry to maintain the slurry stability and achieve ultra‐smooth surface …”