Size oscillations of the work function of a metal film on a dielectric substrate

Korotun, A. V.

doi:10.1134/s1063783415020213

Cited by 13 publications

(13 citation statements)

References 9 publications

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“…Figure 6 b depicts the schematic energy band diagram for the Al-capped SnO channel. Al has a Φ of 4.1 eV [ 39 , 40 ], which is lower than that of the SnO ( Φ = 4.6 eV). Therefore, the energy band near the back-channel surface displays downward bending, thereby forming the depletion region near the SnO-Al interface.…”

Section: Resultsmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

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Section: Resultsmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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“…If one notices that a single edge is present in the limit of π/L z → 0, the result suggests that the jellium edge is 3π/(8K F ) and is shifted inside from the potential edge to satisfy the charge neutrality condition; [4,[6][7][8][9][10][11] Equation (20) indicates…”

Section: Theorymentioning

confidence: 99%

Jellium Edge and Size Effect of Chemical Potential and Surface Energy in Metal Slabs

Seki

2018

J. Phys. Soc. Jpn.

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Although free electron models have been established in order to capture the essential physics of interfacial and bulk properties in metals, some issues still remain regarding the application of free electron models to thin metal films. One of the issues relates to whether the geometric edge coincides with the potential edge in order to satisfy the charge neutrality condition when the potential profile is modeled as a rectangular potential well. We show that they coincide by rigorously taking into account the quantization effect arising from electron confinement in a thin metal slab. As a result, the overall behaviors of the chemical potential and surface energy show an increasing trend by decreasing the thickness of the slab. The chemical potential and surface energy show an oscillatory thickness dependence by further taking into account the discreteness of the total number of free electrons.

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“…And it was shown that taking into account of geometric properties of a metal qualitatively changes the behaviour of the plasmon spectrum for atomically thin films. In addition, the description of quantum-sized effects on nanoscales and their influence on characteristics of metal films [4,5,6] pushed us to an assumption that these effects also should be taken into consideration. Because in the abovementioned works shown that with the change of a metal thickness wave vector and configuration of bound states change too.…”

Section: Introductionmentioning

confidence: 99%

The influence of the electroneutrality of the metal layer on the plasmon spectrum in "dielectric-metal-dielectric" structures

Polovyi

Petro

2019

MCIT

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Size oscillations of the work function of a metal film on a dielectric substrate

Cited by 13 publications

References 9 publications

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Jellium Edge and Size Effect of Chemical Potential and Surface Energy in Metal Slabs

The influence of the electroneutrality of the metal layer on the plasmon spectrum in "dielectric-metal-dielectric" structures

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