volume 146, issue 1-3, P186-188 2008
DOI: 10.1016/j.mseb.2007.07.075
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Abstract: We have studied photoluminescence (PL) properties of Eu 3+ -doped GaN (GaN:Eu 3+ ) epitaxial films. The GaN:Eu 3+ epitaxial films with a Eu 3+ concentration of 1 at.% exhibit red luminescence due to intra-4f transitions of Eu 3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20 K. In microscopic PL imaging spectroscopy experiments, the intensities of the PL due to the Eu 3+ ions and due to the bound excitons are sensitive to the monitored position. The PL mechanisms of the GaN:Eu 3+ …

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