Single-electron memory

Single-electron effects in heavily doped polycrystalline silicon nanowires

“…1,2 SETs based on silicon are advantageous for incorporation into established CMOS fabrication lines, and devices have been reported in crystalline material, particularly silicon-on-insulator. These use either lithographically defined islands 3,4 or multipletunnel junctions created by material/structural disorder effects.…”

Nanoscale Coulomb blockade memory and logic devices

“…Since single-electron memory was first reported in 1993 [7], a variety of single-(or few-) electron memory structures have been reported. These single-electron memories may be classified into two groups: one is the quantum-dot (QD) cell for non-volatile memory applications and the other is the MTJ cell for fast RAM applications.…”

“…The MTJ cells were demonstrated first using a side-gated δ-doped GaAs nanowire [7] and also by using a heavily doped Si nanowire formed on an SOI substrate [13]. An advanced MTJ cell structure, L-SEM (lateral single-electron memory), has also been proposed [14][15][16][17] so as to achieve compatibility between the MTJ transistors and peripheral CMOS sense circuits.…”

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement

“…1, which is based on the recent experimental work [3]. An in-plane tunnel junction array [4] is integrated into the gate of a MOSFET, and the write operation is achieved by electrons tunneling through the junctions between the word electrode and the memory node. The stored data is maintained by the Coulomb blockade of the tunnel junctions and is sensed by applying a small voltage between the source and the drain electrode.…”