2018
DOI: 10.7567/apex.11.082302
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Single-crystal Cu(In,Ga)Se2solar cells grown on GaAs substrates

Abstract: Single-crystal Cu(In,Ga)Se2 (CIGS) solar cells were produced with techniques developed for high-efficiency polycrystalline CIGS solar cells. The CIGS layers of a lattice match with GaAs were grown on GaAs(001) substrates by co-evaporation. The presence of a single-crystal CIGS layer without dislocations was confirmed by transmission electron microscopy. Alkaline metal incorporations were achieved by doping and postdeposition treatments. Ga grading structures were fabricated by two-layer deposition with differe… Show more

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Cited by 31 publications
(43 citation statements)
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“…1a) revealed trenches aligned in the [011] direction (cubic system) of the GaAs substrate with peak-to-peak height of up to 130 nm. Such patterns were already demonstrated for CIGS samples, where we can associate the alignment to the preferential growth direction during the epitaxial process and the facets to the spontaneous formation of a low energetic (112) polar surface [4], [15], [16]. Fig.…”
Section: Experimental Descriptionsupporting
confidence: 56%
See 1 more Smart Citation
“…1a) revealed trenches aligned in the [011] direction (cubic system) of the GaAs substrate with peak-to-peak height of up to 130 nm. Such patterns were already demonstrated for CIGS samples, where we can associate the alignment to the preferential growth direction during the epitaxial process and the facets to the spontaneous formation of a low energetic (112) polar surface [4], [15], [16]. Fig.…”
Section: Experimental Descriptionsupporting
confidence: 56%
“…Almost all absorbers and cells have been grown on glass substrates with a Mo back contact, which leads to a polycrystalline growth with many grain boundaries and different surface orientations of the individual grains [2], [3]. Only recently solar cells based on epitaxially grown of CIGS deposited on GaAs wafers have achieved an efficiency of 20% [4]. One of the main advantages of high quality single crystalline material is the absence of grain boundaries, leading to higher values of quasi-Fermi level splitting due to the reduction of carrier recombination sites [5].…”
Section: Introductionmentioning
confidence: 99%
“…Typically, the net acceptor (hole) concen- * marcon@bgsu.edu tration, N , and open-circuit voltage, V oc , increase with temperature under charge injection conditions, whereas dark annealing (without charge injection) tends to reduce N and V oc . Similar effects have been observed in single crystal CIGS PV devices [18].…”
Section: Introductionsupporting
confidence: 81%
“…Since record cells are historically polycrystalline in nature, the study is easily referred to as irrelevant for the technology. However, besides the fact that monocrystalline CIGS cells have now reached notable efficiencies up to 20%, 75 the ndings must be related to the broader context if the community aspires to gain a deeper understanding of the fundamental material properties.…”
Section: Two Hypothesesmentioning
confidence: 99%