Simulation Study of a Field Emission Triode Structure Using Carbon-Nanotube Emitters

Abstract

The device level simulation analysis without considering nanometer geometry of the emissive material is carried out on a self-aligned gated field emission triode structure that can be used for low electric-field emissive materials such as carbon nanotubes. The electric properties of the device, such as electric-field distribution, pixel capacitance, and gate controllability, are simulated using a commercially available field solver based on the boundary-element method. The simulation results show that the depletion-mode operation can eliminate high electric field near the triple-junction regions and produce better uniform emission, comparing enhanced mode operation. The detail of the depletion mode operation is discussed. We also calculate the effect of the gate thickness on pixel emission current and suggest control of the variation of gate layer depostion within 3% in short distance and 20%-30% over the whole display area.Index Terms-Carbon nanotube (CNT), depletion mode, electric-field simulation, electron emission, field emission display (FED), pixel response time.

Modeling of the integrated magnetic focusing and gated field-emission device with single carbon nanotube

“…The latter point can be clearly seen from Fig. 9 Thus, as compared to electrostatic focusing, magnetic focusing greatly enhances the fieldemission anode current, but also reduces the dispersion of the beam at the anode. The dramatic decrease in total emitted current from the emitter tip ͑e.g., 2.45 ϫ 10 −5 A for the triode structure reduces to 6.50ϫ 10 −6 A for the tetrode structure with V f =5 V, at V g = 120 V͒ is attributed to the reduction of electric field caused by the addition of the electrostatic focusing structure.…”

“…[1][2][3][4] Therefore, CNTs have great potential to be used as field-emission cathodes for various applications of vacuum microelectronic devices, including field-emission displays ͑FEDs͒, [5][6][7][8][9][10][11][12] high-frequency microwave amplifiers, 13 electron microscopy, and parallel electron-beam lithography. [1][2][3][4] Therefore, CNTs have great potential to be used as field-emission cathodes for various applications of vacuum microelectronic devices, including field-emission displays ͑FEDs͒, [5][6][7][8][9][10][11][12] high-frequency microwave amplifiers, 13 electron microscopy, and parallel electron-beam lithography.…”

“…[1][2][3][4] Therefore, CNTs have great potential to be used as field-emission cathodes for various applications of vacuum microelectronic devices, including field-emission displays ͑FEDs͒, [5][6][7][8][9][10][11][12] high-frequency microwave amplifiers, 13 electron microscopy, and parallel electron-beam lithography. 9 The bias on the anode is typically between one to several kilovolts [9][10][11][12] to accelerate the electrons onto the anode. The voltage applied on the gate electrode was typically larger than 70 V ͑Refs.…”

“…1,14 Most of the FE devices applied the well-known Spindttype structure, 15 which has a metallic or silicon etched field emitter with an integrated gate electrode aperture surrounding the emitter tip to control the extraction of emission current. [7][8][9][10]12,16 For some applications, such as electron-beam lithography and microscopy, an individual gated carbon nanotube field emitter was specifically fabricated to eliminate the screening effects and to optimize the emitted current and electron-beam diameter. 9-12͒ to extract the expected emission current for the operation of FE devices.…”

7.3: Morphology Effect on Field Emission Property of Carbon Nanotube Emitters in Triode Structure

“…Carbon nanotubes (CNTs) nowadays are promising in coldcathode flat panel displays for their chemical stability, mechanical strength, and electron emission properties [1][2][3][4][5][6][7][8][9]. A triode-typed field emission display (FED) possesses stable and effective emissions and high quality screen which is superior to a diodetyped one.…”