Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor

Abstract

Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) tools, we focus on the influences of UTB-FDSOI devices with different structures and parameters on TID effects, such as buried oxide (BOX) layer thickness, buried Si3N4 layer, and electron traps. First, we construct four types of UTB-FDSOI N-type metal-oxide semiconductor (NMOS) devices numerically, in which the novel device features a buried silicon-oxidenitride-oxide-silicon (SONOS) structure. Then, the transfer characteristics and trapped charge distribution of these devices are studied under different irradiation doses. It is known that a thinner BOX layer could lead to slighter TID effects, and the buried nitride layer and the electron traps could reduce the TID-induced leakage current (Ioff). Employing these optimization structures for TID effects hardness, the innovative transistor shows much better resistance against TID effects compared to the conventional FDSOI transistors. In addition, the threshold voltage of the novel device could be increased by applying appropriate bias conditions, similar to those of programming SONOS memory, so that the Ioff caused by TID irradiation further decreases. These results provide useful guidance for designers to achieve TID effects mitigation of SOI devices.

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

“…By analyzing Figures 8b and 9, it can be noticed that high gate voltage results in an increased carrier generation rate in the BOX layer during irradiation; however, the increase in the number of oxide trap charges in the BOX layer generated during irradiation is very slight. This phenomenon can be explained by Equation (8). In Equation ( 8), 𝑝 , 𝑝 are positive values and 𝑝 is a negative value.…”

Complex Design of CMOS Logic With Tolerance to Particle and Cumulative Radiation

“…In this study, CMOS logic was designed using the SOI process by utilizing the high resistance of the depletion layer caused by the BOX layer to enhance the resistance to SEUs and SELs [11], [12].…”

3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT

“…月球-180℃～+120℃的典型极端宽温范围内，SiGe 器件使相关航天探测设备具 备去掉庞大保温装置的可能，进而降低发射成本 [4][5] 。因此，不同于传统设计中 无源器件作为舱外设备的主流，SiGe HBT 具备了有源器件舱外应用的可能性， 能够显著提高平台的有效载荷质量， 实现信息获取、 处 理 与传输能力的大幅提升。 同时，SiGe HBT 利用能带工程，在增益、频响特性、噪声和线性度等方面都表 现出优异的电学性能；其还与 Si CMOS 工艺具有良好的兼容性，对于不同电路 应用具有很强的适用性，成为空间极端环境应用中的有力竞争者之一 [6][7] 。 然而， 工作于空间辐射环境中的电子系统不可避免的要遭受电离辐射的影响。 尤其当器件应用于卫星壳体外部时，短时间内遭受的粒子辐射急剧增加，电离辐 射总剂量效应成为不可忽视的损伤因素。在 SiGe HBT 实现商业量产之后，针对 其的总剂量效应实验研究工作也随之展开，结果表明 SiGe HBT 抗总剂量效应能 力要强于传统 Si BJT，但早期研究的实验环节设计较为简单，多采用浮空辐照的 实验条件，对其辐照后的损伤机制仍采用传统 BJT 正向电学特性的方法进行分 析，不同氧化层中辐射诱发不同缺陷的影响也鲜有报道 [8][9][10][11][12] ；另一方面，由于总 剂量效应作用机理目前尚未形成统一的认识， 其计算机数值仿真并不像单粒子效 应一样具有完善的模型，基于数值仿真的 SiGe HBT 总剂量效应机理分析报道较 少 [13][14] [13][14][15][16] 与 SiNPN 双极晶体管相似，SiGe HBT 辐照后电学性能的退化主要是由基极…”