Simulation of the diffraction characteristics of a one-dimensional dual-periodicity superlattice

Weaver, Katherine E.; Lakhtakia, Akhlesh

doi:10.1016/j.ijleo.2007.01.001

Cited by 1 publication

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this study, the crystallographic coalescence into silicon cluster superlattice structures has been investigated with the use of a new laser ablation-type silicon cluster beam system. This system, which is based on a principle that has been theoretically − and empirically developed, can control the growth of the silicon clusters by shock-wave confinement to obtain a highly condensed pulsed beam with a uniform size distribution. Absolute values of the crystallographic structures of the silicon cluster superlattices formed on a graphene substrate were also studied and discussed to describe the crystallographic coalescence into the superlattice structure.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic Coalescence of Crystalline Silicon Clusters into Superlattice Structures

Iwata¹,

Tomita²,

Uchida

et al. 2015

Crystal Growth & Design

View full text Add to dashboard Cite

The crystallographic coalescence of crystalline silicon clusters into superlattice structures, generated by direct deposition of a silicon cluster beam on a graphene substrate, has been observed. High-resolution transmission electron microscopy and transmission electron diffraction analyses revealed that adjacent silicon clusters in the superlattices, having a mean diameter of 1.61 ± 0.05 nm (n = 109, n indicating the cluster size, Si n ) and an sp 3 diamond structure, form sp 3 covalent bonds between Si atoms on their surfaces and align their atomic crystalline axes, forming crystallographic rows to coalesce into bcc superlattice structures with a lattice constant of 2.134 ± 0.002 nm. The hcp configuration of the silicon clusters with the same lattice constant as the bcc superlattice unit cell is commensurate with the crystallographic structure of the graphene substrate. The absorption spectra confirm the sp 3 diamond structure of the silicon clusters under well-quantized conditions. Oxygen-free unoccupied electronic states (UDOS) in the conduction band of the silicon cluster superlattices appeared at 99.8 eV in the electron energy loss spectroscopy spectra. The s + d UDOS at 107.5 eV in SiO 2 became conspicuous as the oxidation of the specimen advanced. The collective bulk plasmon loss of the virtually oxygen-free silicon cluster superlattice appeared at 16.7 eV.

show abstract