Simulation of GaAs IMPATT diodes including energy and velocity transport equations

Mains, R. K.; Haddad, G.I.; Blakey, P.A.

doi:10.1109/t-ed.1983.21294

Cited by 86 publications

(21 citation statements)

References 9 publications

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“…In Fig. 14 the electron dynamic temperature [65] and the impact ionization generation rate are shown along the Si/SiO 2 interface for V GS = 1.0 V and V DS = 1.0 V. Both quantities are rather unrelated and impact ionization cannot be described by a local temperature model typically used in hydrodynamic simulations [66]. The peak of the impact ionization generation rate appears closer to the drain contact than that of the dynamic temperature.…”

Section: Partially-depleted Soi Mosfetmentioning

confidence: 99%

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Hong

Jungemann

2009

J Comput Electron

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The numerical properties of a deterministic Boltzmann equation solver based on a spherical harmonics expansion of the distribution function are analyzed and improved. A fully coupled discretization scheme of the Boltzmann and Poisson equations is proposed, where stable equations are obtained based on the H-transformation. It is explicitly shown that the resultant Jacobian matrix for the zeroth order component has property M for a first order expansion, which improves the stability even of higher order expansions. The detailed dependence of the free-streaming operator and the scattering operator on the electrostatic potential is exactly considered in the Newton-Raphson scheme. Therefore, convergence enhancement is achieved compared with previous Gummel-type approaches. This scheme is readily applicable to small-signal and noise analysis. As numerical examples, simulation results are shown for a silicon n + nn + structure including a magnetic field, an SOI NMOSFET and a SiGe HBT.

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Section: Partially-depleted Soi Mosfetmentioning

confidence: 99%

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Hong

Jungemann

2009

J Comput Electron

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“…It includes a quantum correction and consistent mobility and noise models for the inversion layer and has been shown to yield accurate results for NMOSFETs [4]. The simulations include noise due to carrier scattering (so-called diffusion or thermal noise), due to II (simulated with the local temperature model [5]), and due to Shockley-Read-Hall (SRH) recombination [6,7]. Because of the lack of a microscopic model for 1/f noise, this type of noise is not considered in the simulations.…”

Section: Simulation Model and Device Structurementioning

confidence: 99%

Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation

Jungemann

Neinhüs

Nguyen

et al. 2004

Simulation of Semiconductor Processes and Devices 2004

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Without a tie, the body of an SOI devices floats and majority carrier generation causes a kink in the output characteristics. The underlying feedback mechanism strongly amplifies the noise at low frequencies. This effect is investigated for the first time by 2D bipolar hydrodynamic device simulation including a quantum correction and consistent mobility and noise models for the channel. The simulations reproduce the noise behavior observed experimentally and support the conclusions drawn based on analytical modeling. Not only noise due to impact ionization but also due to other generation/recombination processes is found to be amplified by the floating body effect.

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“…Since isotropy is assumed in the derivation of ( l o ) , an average value of a , 0.78, was used in evaluating (10) in the gamma band. Anisotropy was accounted for in the final averaging of the distributions, since the exact a of the initial vectors was known.…”

Section: Pl2mentioning

confidence: 99%

An efficient velocity–space model of carrier transport in Gallium Arsenide

Dunn¹,

Araújo

1991

Int J Numerical Modelling

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SUMMARYA new GaAs carrier transport modelling methodology is presented, designed to address the competing needs of microscopic detail and of computational efficiency. The rationale for advanced semiclassical models based on the Boltzmann transport equation (BTE) are reviewed and discussed in terms of the unique properties of GaAs. A new methodology is then presented, formulated around a one-dimensional velocity-space variable. It includes a realistic description of the GaAs band structure including multiple valleys, nonparabolicity, and anisotropy, which is used to explicitly evaluate the scattering distributions, and rates, for different scattering mechanisms. These in turn allow a direct evaluation of the BTE scattering inegral, which is solved iteratively with the non-scattering terms. Based on this methodology, a prototype model is shown to reproduce the GaAs velocity-field relationship in homogeneous, undoped material. Band structure and forward-scattering effects are clearly visible in the model's solutions for the carrier velocity distribution. The model's computational simplicity, combined with a finer level of detail, makes it suitable for device simulation without invoking Monte Carlo or other computationally intensive methods.

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Simulation of GaAs IMPATT diodes including energy and velocity transport equations

Cited by 86 publications

References 9 publications

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation

An efficient velocity–space model of carrier transport in Gallium Arsenide

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