Simulation of Current and Voltage Sensors Using a Nodal Method

A low-cost experimental test bench for electronic power devices

“…In fact, a voltage probe can deform the signal and add a temporal delay. Moreover, measurements can be disturbed by the synchronous noises of the signal collected by the probes [12]. To reduce these disturbances, literature presented the potential differences method [13].…”

“…Unfortunately, the knowledge of the frequency response and the maximum voltage to measure are not sufficient to select a voltage probe. Other characteristics such as the input capacitance, the equivalent impedance of the sensor head for example, have a great effect on the performance of these probes, and their interaction with circuit [12]. Among the elements which limit the precision of voltage measurement, there are the voltage probes and the used oscilloscope.…”

“…However, it needs a complicated electronic circuit and they are sensitive to the CEM. Literature [12] shows that the shunt is best adapted for precise measurements. It produces excellent results (frequency response, current value).…”

“…But, the absence of galvanic isolation makes measurement difficult. This type of sensor remains one of most powerful and precise current measurement techniques [12]. For our experiment, a Hall Effect current probe, Tektronix AM 503B, and a shunt (SDN-414-025) are used to measure the switching current.…”

“…The channels do not exist yet: I DS (t) differs little from zero, the current in the diode differs little from I E , the voltage V DS (t) remains equal to V E . The delay time td(on)= t 1 -t 0 defined the necessary time for the voltage V GS to reach the threshold voltage V T0 [12]. The SiC-JFET current peak is caused by the reverse recovery of the diode during its blocking.…”