2011
DOI: 10.2494/photopolymer.24.47
|View full text |Cite
|
Sign up to set email alerts
|

Simulation and Mitigation of Pattern and Process Dependencies in Nanoimprint Lithography

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(2 citation statements)
references
References 50 publications
0
2
0
Order By: Relevance
“…Nanoimprint lithography (NIL) often exhibits strong, systematic pattern dependencies, whereby spatial variation of the size, shape and areal density of geometries leads to parasitic elastic deflections of the stamp during imprinting [1]. These stamp deflections result in variation of RLT or incomplete cavity filling.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Nanoimprint lithography (NIL) often exhibits strong, systematic pattern dependencies, whereby spatial variation of the size, shape and areal density of geometries leads to parasitic elastic deflections of the stamp during imprinting [1]. These stamp deflections result in variation of RLT or incomplete cavity filling.…”
Section: Introductionmentioning
confidence: 99%
“…Modeling and numerical simulation can accelerate the development of suitable designs and processes. There have been several attempts to develop simulation techniques for NIL [1], ranging from molecular dynamics, through finite-element approaches to coarse-grain models. We have previously developed and experimentally validated a computationally simple algorithm for the chip-and wafer-scale imprinting of thermoplastic polymers [2], [3].…”
Section: Introductionmentioning
confidence: 99%