This chapter presents three sections that describe the broadband S-band to L-band erbium-doped λiber ampliλier modules. In the λirst section, an S-band μain-clamped erbiumdoped λiber ampliλier EDF" module, employinμ a λiber "raμμ μratinμ F"G to act as a reλlected element λor μeneratinμ a saturated tone injected into the EDF" module by usinμ λorward optical λeedback method, is proposed. Moreover, the output perλormance oλ the μain and noise λiμure NF in the proposed μain-clamped S-band EDF" has been discussed in the wavelenμth ranμe oλ -nm. In the second section, we demonstrate experimentally a μain-λlattened two-staμe erbium-based λiber ampliλier E"F" module, which is composed oλ by an erbium-doped waveμuide ampliλier EDW" and a C-band EDF" in serial structure. In an operation ranμe oλ -nm, the entire μain is larμer than d" and the observed NF is between . and . d". Moreover, ± . d" maximum μain variation is also obtained λor the input siμnal power oλ -d"m. Hence, the proposed λiber ampliλier not only enhances the μain but also achieves the λlatness in the wavelenμth reμion. In the λinal section, a broadband hybrid two-staμe λiber ampliλier, which is composed by a C-band EDF" and a C-band semiconductor optical ampliλier SO" in serial scheme, is investiμated experimentally. Here, we only use a m lonμ erbium-doped λiber EDF servinμ as a preampliλier to increase the μain and reduce the noise λiμure. Thereλore, the proposed hybrid ampliλier achieves a nm eλλectively ampliλica-tion oλ -nm λrom S-to L-band . In addition, the output perλormance oλ μain and NF in the proposed λiber ampliλier has also been discussed.