Silicon qubits move a step closer to achieving error correction

Warren, Ada; Economou, Sophia E.

doi:10.1038/d41586-022-00047-0

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…Electron-spin-based quantum bits, or qubits , are promising platforms for implementing quantum technologies. − For instance, they offer the possibility of using multiple electronic and nuclear energy levels to embed logical qubits within a single object, namely, qudits , which is not trivial with other architectures. − These additional levels can be used to encode quantum error correction algorithms and improve performances. , The molecular approach allows for finely tuning the chemical and physical properties of the systems thanks to a targeted design. , The rational chemical design also allows engineering qubit–qubit interactions used to operate quantum logic gates. − …”

Section: Introductionmentioning

confidence: 99%

“… 1 − 3 For instance, they offer the possibility of using multiple electronic and nuclear energy levels to embed logical qubits within a single object, namely, qudits , which is not trivial with other architectures. 4 − 6 These additional levels can be used to encode quantum error correction algorithms and improve performances. 7 , 8 The molecular approach allows for finely tuning the chemical and physical properties of the systems thanks to a targeted design.…”

Section: Introductionmentioning

confidence: 99%

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VdW Mediated Strong Magnetic Exchange Interactions in Chains of Hydrogen-Free Sublimable Molecular Qubits

Santanni

Briganti

Serrano

et al. 2023

JACS Au

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Sulfur-rich molecular complexes of dithiolene-like ligands are appealing candidates as molecular spin qubits because spin coherence properties are enhanced in hydrogen-free environments. Herein, we employ the hydrogenfree mononegative 1,3,2-dithiazole-4-thione-5-thiolate (dttt − ) ligand as an alternative to common dinegative dithiolate ligands. We report the first synthesis and structural characterization of its Cu 2+ , Ni 2+ , and Pt 2+ neutral complexes. The XPS analysis of thermal deposition of [Cu(dttt) 2 ] in UHV conditions indicates that films of intact molecules can be deposited on surfaces by sublimation. Thanks to a combined approach employing DC magnetometry and DFT calculations, we highlighted AF exchange interactions of 108 cm −1 and 36 cm −1 attributed to the two different polymorph phases. These couplings are exclusively mediated by S•••S VdW interactions, which are facilitated by the absence of counterions and made particularly efficient by the diffuse electron density on S atoms. Furthermore, the spin dynamics of solid-state magnetically diluted samples was investigated. The longest observed T m is 2.3 μs at 30 K, which significantly diverges from the predicted T m > 100 μs. These results point to the diluting matrix severely affecting the coherence lifetime of Cu 2+ species via different factors, such as the contributions of neighboring 14 N nuclei and the formation of radical impurities in a non-completely controllable way. However, the ease of processing [Cu(dttt) 2 ] via thermal sublimation can allow dispersion in matrices better suited for coherent spin manipulation of isolated molecules and the realization of AF-coupled VdW structures on surfaces.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

VdW Mediated Strong Magnetic Exchange Interactions in Chains of Hydrogen-Free Sublimable Molecular Qubits

Santanni

Briganti

Serrano

et al. 2023

JACS Au

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“…Hence, the demand for semiconductor chips, which are essential parts of those devices, is also exploding. Interest in these silicon-based semiconducting materials will continuously increase because silicon has the potential as a quantum computing platform. − Also, silicon-based materials are a platform that can operate above 1 K, which will reduce the costs of building quantum systems and accelerate the realization of commercial-grade quantum computers. , Silicon spin qubits are particularly appealing because devices based on silicon could be produced using modern semiconductor manufacturing techniques and knowledge. Among various semiconducting materials, silicon nitride is used as insulating, masking, and passivating materials due to its wide band gap (5.3 eV) in integrated circuits in the microelectronics industry. , …”

Section: Introductionmentioning

confidence: 99%

Competitive Hydrogen Migration in Silicon Nitride Nanoclusters: Reaction Kinetics Generalized from Supervised Machine Learning

Choi

Adamczyk

2022

J. Phys. Chem. A

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The rate coefficients for 52 hydrogen shift reactions for silicon nitrides containing up to 6 atoms of silicon and nitrogen have been calculated using the G3//B3LYP composite method and statistical thermodynamics. The overall reaction of substituted acyclic and cyclic silylenes to their respective silene and imine species by a 1,2-hydrogen shift reaction was sorted by three different types of H shift reactions using overall reaction thermodynamics: (1) endothermic H shift between N and Si:, (2) endothermic H shift between Si and Si:, and (3) exothermic H shift between Si and Si:. Endothermic H shift reactions between Si atoms have one dominant activation barrier where the exothermic H shift reaction between Si atoms has two barriers and a stable intermediate. The rate-determining step was determined to be from the intermediate to the substituted silene, and then kinetic parameters for the overall reaction were calculated for the two-step pathway. The single event pre-exponential factors, A ̃, and activation energies, E a , for the three different classes of hydrogen shift reactions of silicon nitrides were computed. The hydrogen shift reaction was explored for acyclic and cyclic monofunctional silicon nitrides, and the type of hydrogen shift reaction gives the most significant influence on the kinetic parameters. Using a supervised machine learning approach, the models for predicting the energy barrier of three different hydrogen shift reactions were generalized and suggested based on selected descriptors.

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Wojcieszyn¹

2022

Quantum Science and Technology

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Silicon qubits move a step closer to achieving error correction

Cited by 8 publications

References 10 publications

VdW Mediated Strong Magnetic Exchange Interactions in Chains of Hydrogen-Free Sublimable Molecular Qubits

VdW Mediated Strong Magnetic Exchange Interactions in Chains of Hydrogen-Free Sublimable Molecular Qubits

Competitive Hydrogen Migration in Silicon Nitride Nanoclusters: Reaction Kinetics Generalized from Supervised Machine Learning

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