MRS Proc. 1998 DOI: 10.1557/proc-551-155 View full text
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D. O. Henderson, M. H. Wu, R. Mu, A. Ueda, C. W. White, A. Meldrum

Abstract: AbstractSilicon ions were implanted into fused silica substrates at doses of 1×1021, 2×1021, 5×1021, and 1×1022 ions/cm3. The implanted substrates were annealed at 1100°C for one hour in a reducing atmosphere (95% Ar+5% H2). Optical absorption spectra recorded after the annealing treatment showed absorption onsets at 3.86, 3.73, 2.86 and 2.52 eV for substrates implanted with 1×1021, 2×1021, 5×1021, and 1×1022 ions/cm3, respectively. Static photoluminescence (PL) measurements indicated red emission between 1.72…

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