Silicon nanowires prepared by laser ablation at high temperature

Abstract

Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon.

Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

“…Previously, to obtain 1D nanostructured material, various synthesis methods have been adopted, such as Arc-Discharge, 12 Vapor-Liquid-Solid (VLS) Mechanism, 13 Chemical Vapor Deposition (CVD), 14 Hydrothermal Reaction, 15 Molecular Beam Epitaxy (MBE), 16 Laser Ablation 17 and Electroless Metal Deposition and Dissolution (EMD) 18 . However, these methods often bring complexity to the resulting 1D nanostructures compared to the bulk, such as surface contaminations, lattice defects, and poor chemical stability (degradation in ambient environment).…”

Low‐Dimensional, Hinged Bar‐code Metal Oxide Layers and Free‐Standing, Ordered Organic Nanostructures from Turbostratic Vanadium Oxide

“…One-dimensional nanomaterials, such as nanotubes, [1] nanowires, [2][3][4] and nanobelts or nanoribbons [5,6] have attracted considerable attention in the past decade because of their novel and useful physical properties, leading to numerous applications. Besides the use of 1D metal-oxide nanostructures as functional components in electronics and interconnects in dense, high-speed circuits, they also find application in ultra-small sensors, optical elements for optoelectronics, non-linear optical converters and information storage devices.…”

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

“…Si nanowires (SiNWs) have been produced by various techniques [1][2][3][4][5][6][7][8][9][10]. Broad applications of SiNWs for nanoelectronic or nanothermoelectronic devices or for physical-property testing systems have been proposed [11][12][13].…”