Silicon intensity Mach–Zehnder modulator for single lane 100  Gb/s applications

Li, Miaofeng; Wang, Lei; Li, Xiang; Xiao, Xi; Yu, Shaohua

doi:10.1364/prj.6.000109

Cited by 186 publications

(79 citation statements)

References 23 publications

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“…Optical modulators are key components serving as the information encoding engines from the electrical domain to the optical domain 5 . Optical modulation in silicon mainly relies on free-carrier dispersion effect [9][10][11][12][13][14] . Unfortunately, free-carrier dispersion is intrinsically absorptive and nonlinear, which degrades the optical modulation amplitude (OMA) and may lead to signal distortions when using advanced modulation formats.…”

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confidence: 99%

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond

et al. 2019

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Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately, these criteria have only been achieved on separate occasions. Based on a Silicon and Lithium Niobate hybrid integration platform, we demonstrate Mach-Zehnder modulators that simultaneously fulfill these criteria. The presented device exhibits an insertion loss of 2.5 dB, voltage-length product of 2.2 V•cm, high linearity, electro-optic bandwidth of at least 70 GHz and modulation rates up to 112 Gbit/s. The high-performance modulator is realized by seamless integration of highcontrast waveguide based on Lithium Niobate -the most mature modulator material -with compact, low-loss silicon circuits. The hybrid platform demonstrated here allows for the combination of "best-in-breed" active and passive components, opening up new avenues for enabling future high-speed, energy efficient and cost-effective optical communication networks.

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confidence: 99%

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond

et al. 2019

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“…Carrier-depletion modulators are getting more popular due to their more straightforward fabrication process and flexible design, which is promising for high speed and high efficiency at the same time. More than 100 Gb/s data rate with V π L of 1.4 V•cm has been reported [45]. The modulators discussed in the following are based on carrier-depletion except for special instructions.…”

Section: Silicon Photonics Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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“…Silicon photonics (SiP) electro-optic modulators have reached a high level of maturity both in terms of modulation speed and optical loss [1,2], allowing them the meet the requirements of 400G transceiver systems [3,4]. Their compatibility with accessible CMOS fabrication infrastructure makes them a cost-effective solution for mass-produced single mode fiber output transceivers [5].…”

Section: Introductionmentioning

confidence: 99%

Power-efficient lumped-element meandered silicon Mach-Zehnder modulators

Azadeh

Nojić

Moscoso-Mártir

et al. 2020

Silicon Photonics XV

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Driving electro-optic modulators in lumped-element (LE) configuration allows for small footprint, reduced power consumption, and improved high-speed performance. The main shortcoming of conventional rectilinear LE modulators are the required high drive-voltages, resulting from their shortened phase-shifters. To address this, we introduce a Mach-Zehnder modulator with meandered phase shifters (M-MZM), which can be driven in LE configuration, while keeping the optical phase shifter length in the same order as traveling-wave modulators (TW-MZMs). A design limitation that needs to be taken into account consists in the optical transit time of the device, that limits the overall electro-optic bandwidth. First, we review the overall power consumption improvement as well as the bandwidth enhancement in LE modulators compared to TW-MZMs, also taking the driver output impedance and parasitics from wire-or bump-bonds into account. Then, we report on the design, implementation, and experimental characterization of carrier-depletion based M-MZMs fabricated on silicon-on-insulator (SOI) wafers using standard CMOS-compatible processes. The fabricated M-MZMs, provided with low (W1), moderately (W2) and highly (W3) doped junctions, require 9.2 Vpp, 5.5 Vpp, and 3.7 Vpp for full extinction, with optical insertion losses of 5 dB, 6.3 dB and 9.1 dB. For all three M-MZMs, open eye diagrams are recorded at 25 Gb/s using a 50 Ω driver and termination. For unterminated M-MZMs, higher data rates could be achieved, provided that a low output impedance driver be wire-or bump-bonded to the modulators. Finally, we compare the power consumption of the M-MZMs with TW-MZMs and show that the M-MZMs feature a 4X reduced power consumption at 25 Gb/s.

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Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Cited by 186 publications

References 23 publications

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Power-efficient lumped-element meandered silicon Mach-Zehnder modulators

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