Silicon flexoelectronic transistors

Guo, Dilong; Guo, Pengwen; Ren, Lele; Yao, Yuan; Wang, Wei; Jia, Mengmeng; Wang, Yulong; Wang, Longfei; Wang, Zhong Lin; Zhai, Junyi

doi:10.1126/sciadv.add3310

Cited by 19 publications

(9 citation statements)

References 59 publications

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“…Additionally, the gauge factors of BPT are also calculated and summarized as a comparison with some other strain sensors, ,,− ,− as shown in Figure e (Table S4). The BPT based on p -GaN/ p -GaN wafers shows obvious advantages in a small strain range than other sensors (including SPT).…”

Section: Resultsmentioning

confidence: 99%

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability

Chen,

Yu,

Liu

et al. 2024

ACS Nano

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Piezotronic effect utilizing strain-induced piezoelectric polarization to achieve interfacial engineering in semiconductor nanodevices exhibits great advantages in applications such as human-machine interfacing, micro/nanoelectromechanical systems, and next-generation sensors and transducers. However, it is a big challenge but highly desired to develop a highly sensitive piezotronic device based on piezoelectric semiconductor wafers and thus to push piezotronics toward wafer-scale applications. Here, we develop a bicrystal barrier-based piezotronic transistor for highly sensitive pressure sensing by p-GaN single-crystal wafers. Its pressure sensitivity can be as high as 19.83 meV/MPa, which is more than 15 times higher than previous bulk-material-based piezotronic transistors and reaches the level of nanomaterial-based piezotronic transistors. Moreover, it can respond to a very small strain of 3.3 × 10–6 to 1.1 × 10–5 with high gauge factors of 1.45 × 105 to 1.38 × 106, which is a very high value among various strain sensors. Additionally, it also exhibits high stability (current stability of 97.32 ± 2.05% and barrier height change stability of 95.85 ± 3.43%) and high linearity (R 2 ∼ 0.997 ± 0.002) in pressure sensing. This work proves the possibility of designing a bicrystal barrier as the interface to obtain a strong piezotronic effect and highly sensitive piezotronic devices based on wafers, which contributes to their applications.

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Section: Resultsmentioning

confidence: 99%

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability

Chen,

Yu,

Liu

et al. 2024

ACS Nano

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“…Strain engineering plays a crucial role in enhancing flexoelectric effect in materials. 87 Researchers have made significant progress in this field, exploring various strain engineering techniques to manipulate and enhance the flexoelectric response, where some notable research advancements are strain-gradient engineering, lattice-mismatched heterostructures, epitaxial strain engineering, mechanical deformation, residual strain engineering, etc. 88 The introduction of strain gradients in materials has been investigated to enhance the flexoelectric effect, by creating nonuniform strain distributions, such as through patterned substrates or engineered interfaces.…”

Section: Strain Engineeringmentioning

confidence: 99%

“…Strain engineering plays a crucial role in enhancing flexoelectric effect in materials . Researchers have made significant progress in this field, exploring various strain engineering techniques to manipulate and enhance the flexoelectric response, where some notable research advancements are strain-gradient engineering, lattice-mismatched heterostructures, epitaxial strain engineering, mechanical deformation, residual strain engineering, etc .…”

Section: Mechanisms Of Enhanced Flexoelectric Effectmentioning

confidence: 99%

Advancements and Prospects of Flexoelectricity

Xia,

Qian,

Yang

2024

ACS Appl. Mater. Interfaces

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The flexoelectric effect, as a novel form of the electromechanical coupling phenomenon, has attracted significant attention in the fields of materials science and electronic devices. It refers to the interaction between strain gradients and electric dipole moments or electric field intensity gradients and strain. In contrast to the traditional piezoelectric effect, the flexoelectric effect is not limited by material symmetry or the Curie temperature and exhibits a stronger effect at the nanoscale. The flexoelectric effect finds widespread applications ranging from energy harvesting to electronic device design. Utilizing the flexoelectric effect, enhanced energy harvesters, sensitive sensors, and high-performance wearable electronic devices can be developed. Additionally, the flexoelectric effect can be utilized to modulate the optoelectronic properties and physical characteristics of materials, holding the potential for significant applications in areas such as optoelectronic devices, energy storage devices, and flexible electronics. This review provides a comprehensive overview of the historical development, measurement of flexoelectric coefficients, enhancement mechanisms, and current research progress of the flexoelectric effect. Additionally, it offers a perspective on future prospects of the flexoelectric effect.

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“…Recently, the triboelectric nanogenerator (TENG), an energy collection device that can convert mechanical energy in the ambient environment into electricity by coupling triboelectrification and electrostatic induction effects, has been widely applied in energy harvesting, self-powered sensing systems, wearable devices, and so on. − Given that numerous mechanical energies in the environment are irregular and random, it becomes difficult for TENG with rigid tribo layers or electrodes to efficiently harness them. − On the one hand, these types of TENG usually gather mechanical energy in one specific motion direction, and hence, any change in the motion direction would cause unsatisfactory contact between the tribo materials, leading to a decrease in the output performance of TENG. , On the other hand, rigid materials are undeformable, and hence they are incompatible with soft and biological systems, limiting the application of TENG in areas such as human motion monitoring, wearable devices, etc. − Thus, elastic materials and a flexible structure design have drawn the attention of researchers and have been applied in TENG. These kinds of TENGs, with a flexible structure or composed of soft and elastic materials, can act as tribo materials or electrodes, can harvest random and irregular energies, and have great potential application value in fields such as self-powered wearable devices, human motion monitoring, and so on. − …”

Section: Introductionmentioning

confidence: 99%

Polypyrrole@CNT@PU Conductive Sponge-Based Triboelectric Nanogenerators for Human Motion Monitoring and Self-Powered Ammonia Sensing

Ma,

Zhao,

Tang

et al. 2023

ACS Appl. Mater. Interfaces

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Elastic sponges are ideal materials for triboelectric nanogenerators (TENGs) to harvest irregular and random mechanical energy from the environment. However, the conductive design of the elastic materials in TENGs often limits its applications. In this work, we have demonstrated that an elastic conductive sponge can be used as the triboelectric layer and electrode for TENGs. Such an elastic conductive sponge is prepared by a simple way of adsorbing multiwalled carbon nanotubes and monomers of pyrrole to grow conductive polypyrroles on the surface of an elastic polyurethane (PU) sponge. Due to the porous structure of the PU sponge and the conductive multiwalled carbon nanotubes (MWCNTs), PPy on the surface of PU could provide a large contact area to improve the output performance of TENGs, and the conductive sponge-based TENG could generate an output of open-circuit voltage of 110 V or a short-circuit current of 12 μA, respectively. The good flexibility of the conductive PU sponge makes the TENG harvest the kinetic energy of disordered motion with different amplitudes, allowing for human motion monitoring. Furthermore, the porous structure of PU and the synergistic effects of PPy and MWCNTs enable the conductive sponge to sense NH 3 as a self-powered NH 3 sensor. This work offers a simple way to construct a flexible TENG system for random mechanical energy harvesting, human motion monitoring, and self-powered NH 3 sensing.

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Silicon flexoelectronic transistors

Cited by 19 publications

References 59 publications

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability

Advancements and Prospects of Flexoelectricity

Polypyrrole@CNT@PU Conductive Sponge-Based Triboelectric Nanogenerators for Human Motion Monitoring and Self-Powered Ammonia Sensing

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