Silicon detectors for charged particles manufactured by conventional planar technology

Sueva, D.; Spassov, V.; Chikov, N.; Ivanov, I.

doi:10.1109/23.221047

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2008

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Cited by 9 publications

(1 citation statement)

References 14 publications

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“…In Ref. [14] the design and the technology of the detectors are described in details. The electronic measurement system transforms the gamma radiation into current in the range of 10 À6 -10 À12 A.…”

Section: Experimental Set Upmentioning

confidence: 99%

Measurement of strong gamma fields by silicon detectors working in a current-generation mode

Sueva

Georgiev

Chikov

et al. 2008

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Experimental Set Upmentioning

confidence: 99%

Measurement of strong gamma fields by silicon detectors working in a current-generation mode

Sueva

Georgiev

Chikov

et al. 2008

Nuclear Instruments and Methods in Physics Research Section A:

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Investigation of Radiation Damage in Silicon Produced by Fast Neutron Irradiation with Lifetime Measurements and Deep Level Transient Spectroscopy

Stefanov

Hardalov

Sueva

1997

phys. stat. sol. (a)

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Deep level transient spectroscopy (DLTS) and lifetime measurements were carried out on silicon p+nn+ diodes before and after irradiation with fast neutrons at room temperature with fluences of 5.5 × 1011 and 1.0 × 1012 n/cm2. In the non‐irradiated samples the observed levels satisfactorily explained the measured data of recombination and generation lifetimes in the frame of the Shockley‐Hall‐Read (SHR) theory. After irradiation the lifetime data showed discrepancies with the parameters of the existing levels, which was explained by the cluster structure of the neutron damage defects.

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On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation

1995

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Silicon detectors for charged particles manufactured by conventional planar technology

Cited by 9 publications

References 14 publications

Measurement of strong gamma fields by silicon detectors working in a current-generation mode

Measurement of strong gamma fields by silicon detectors working in a current-generation mode

Investigation of Radiation Damage in Silicon Produced by Fast Neutron Irradiation with Lifetime Measurements and Deep Level Transient Spectroscopy

On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation

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