Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems

Guy, Owen J.; Lodzinski, Michal; Castaing, A.; Igić, Petar; Pérez‐Tomás, Amador; Jennings, Michael R.; Mawby, P.A.

doi:10.1109/epepemc.2008.4635633

Cited by 9 publications

(4 citation statements)

References 38 publications

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“…IV characteristics are more sensitive to small regions with low SBH than CV characteristics [28]. Guy et al [29] have argued that the difference in SBH measured by the two methods is due to the presence of an additional capacitance at the metal-semiconductor interface which originates from a thin oxide layer which comes as a result of surface preparation. The general increase with annealing temperature of the SBH obtained from CV characteristics might be attributed to microstructure transformation of the Ru-6H-SiC interface as evidenced by RBS and Raman analysis above.…”

Section: Resultsmentioning

confidence: 99%

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

et al. 2014

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Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonalsilicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru 2 Si 3 ) at 800 o C,while diffusion of Ru into 6H-SiC commenced at 800 o C . Raman analysis of the thin films annealed at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.

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Section: Resultsmentioning

confidence: 99%

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

et al. 2014

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“…Normally the SBHs that are obtained from C-V measurements are slightly higher than those from I -V characteristics, as there is a possibility of the existence of an additional capacitance at the metal-semiconductor interface due to the presence of a thin oxide layer which comes as a result of surface preparation. 13 Another explanation for the differences may be the existence of inhomogeneous interfaces, which result in non-uniform Schottky contacts where current can flow via two pathways (i.e., over a lower barrier or a higher barrier).…”

Section: Where V I Is the Voltage Intercept Andmentioning

confidence: 99%

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

et al. 2015

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Abstract. Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400 • C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800 • C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance-voltage characteristics and excellent forward current-voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium-silicon-carbide interface, up to an annealing temperature of 800 • C.

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“…Schottky diodes are also used to block the unwanted conduction of the MOSFET body diodes during dead times in power converters [13]. In addition, switching combinations of SiC Schottky diodes with various transistors including silicon power MOSFETs [14], CoolMOS [15], SiC MOSFETs [16], [17] and JFETs [18] have shown significant advantages compared to that of combinations with silicon PiN diodes [19].…”

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confidence: 99%

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature

Jahdi

Alatise

et al. 2015

IEEE Trans. Power Electron.

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Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems

Cited by 9 publications

References 38 publications

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature

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