Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments

Myers, David R.; Cheng, Kan; Jamshidi, B.; Azevedo, Robert G.; Senesky, Debbie G.; Chen, Li; Mehregany, Mehran; Wijesundara, Muthu B. J.; Pisano, Albert P.

doi:10.1117/1.3143192

Cited by 33 publications

(10 citation statements)

References 19 publications

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“…Silicon Carbide (SiC) is a silicon-based wide band-gap material, which exhibits strong mechanical properties and is chemically inert. These properties have led to the employment of SiC in a variety of applications due their stability within a multitude of environments: In high-temperature energy conversion devices and in chemically corrosive and high shock environments [ 15 , 16 ]. SiC-based field-effect transistors (FETs) have demonstrated operation for thousands of hours under high-temperature conditions [ 17 ] and SiC NWs have been used in hydrogen sensors [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

et al. 2018

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The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200–600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.

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Section: Introductionmentioning

confidence: 99%

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

et al. 2018

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“…SiC is more successful in resistance than Si or diamond-like carbon with chemical, wear, mechanical, and oxidation. Myers et al 26 reported that polycrystalline 3C-SiC sensor resonates in air and can operate at 873 K in dry steam. The development of advanced ceramic (e.g., SiC) semiconductors has enabled a new class of sensor and electronics that can operate in hostile conditions and is also believed to contribute to increased fuel efficiency, increased operation lifetime, and reduced emission (in aircraft propulsion, industrial gas turbines, and automotive engines).…”

Section: Introductionmentioning

confidence: 98%

Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

Selvakumar

Sathiyamoorthy

2012

J. Mater. Res.

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REVIEWThis section of Journal of Materials Research is reserved for papers that are reviews of literature in a given area.Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review Next-generation fission and fusion nuclear reactor materials will be exposed to very high temperatures, intense neutron radiation, corrosive environments, and, mostly, all three at once. Grand opening will be given to the material, if they have stability at high temperature operating favorable in the extreme environments, self-healing, thermal as well as irradiation properties. Owing to the superior properties of silicon carbide, nuclear scientists are closely evaluating SiC-based materials for various applications in nuclear reactors. In the present perspective, relevant properties, challenging issues, and recommendations are emphasized. Based on our recent experiments, attempt to solve various uses on SiC-based materials in nuclear applications is described in detail.

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“…Applications for such materials are driven by the extensive sensor, actuator, and MEMS industries. For specific applications, see Rebeiz et al [16], Quandt and Ludwig [17], Grimes et al [18], and Kouzoudis and Grimes [19,20], Azevedo et al [21], Jones et al [22], and Myers et al [23]. In certain instances, these materials are used in conjunction with static magnetic fields to facilitate devices which handle time-varying electrical loads.…”

Section: Introduction and Objectivesmentioning

confidence: 99%

Electromagnetically-Induced Vibration in Particulate-Functionalized Materials

Zohdi

2013

Journal of Vibration and Acoustics

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In many small-scale devices, the materials employed are functionalized (doped) with microscale and/or nanoscale particles, in order to deliver desired overall dielectric properties. In this work, we develop a reduced-order lumped-mass model to characterize the dynamic response of a material possessing a microstructure that is comprised of an electromagnetically-neutral binder with embedded electromagnetically-sensitive (charged) particles. In certain industrial applications, such materials may encounter external electrical loading that can be highly oscillatory. Therefore, it is possible for the forcing frequencies to activate the inherent resonant frequencies of these micro- and nanostructures. In order to extract qualitative information, this paper first analytically investigates the mechanical and electromagnetic (cyclotronic) contributions to the dynamic response for a single particle, and then quantitatively investigates the response of a model problem consisting of a coupled multiparticle periodic array, via numerical simulation, using an implicit temporally-adaptive trapezoidal time-stepping scheme. For the model problem, numerical studies are conducted to observe the cyclotronically-dominated resonant frequency and associated beat phenomena, which arises due to the presence of mechanical and electromagnetic harmonics in the material system.

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Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments

Cited by 33 publications

References 19 publications

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

Electromagnetically-Induced Vibration in Particulate-Functionalized Materials

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