Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

McNutt, Ty; Hefner, Allen R.; Mantooth, H. Alan; Berning, D.W.; Ryu, Sei‐Hyung

doi:10.1109/tpel.2006.889890

Cited by 199 publications

(54 citation statements)

References 12 publications

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“…The capacitance CDS is a drain-source voltage VDS -sensitive parameter due to the variation in depletion region width of the drain-body junction with VDS, which is given by [20,21]:…”

Section: Temperature-based DV Ds /Dt Modelmentioning

confidence: 99%

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Liao

et al. 2017

Energies

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Due to our limited knowledge about silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dV DS /dt) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of dV DS /dt for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on dV DS /dt is sensed, the device temperature can be estimated from the relationship curve of turn on dV DS /dt versus temperature drawn in advance.

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“…The capacitance CDS is a drain-source voltage VDS -sensitive parameter due to the variation in depletion region width of the drain-body junction with VDS, which is given by [20,21]:…”

Section: Temperature-based DV Ds /Dt Modelmentioning

confidence: 99%

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Liao

et al. 2017

Energies

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“…Previously, a software package called IGBT Model Parameter extrACtion Tools (IMPACT) [6,8] for extracting parameters of silicon IGBTs was extended to include SiC power MOSFETs in a software package called SiC-IMPACT [7]. In this work, the SiC-IMPACT software tools are extended to include features that are needed for SiC IGBTs, including an alternate Tau-Effective-Extraction Program (TAUEFFMSR) to extract the base lifetime (τHL) and buffer-layer lifetime (τbuf) model parameters.…”

Section: High-voltage 4h-sic Buffer Layer N-igbt Parameter Extracmentioning

confidence: 99%

“…The previously developed silicon buffer layer IGBT model was implemented into the Saber® circuit simulator using the Saber® MAST modeling language [4,5]. In this work, the model is extended to include the device and material properties of SiC by incorporating the material properties described in [6,7] into the models described in [4,5]. To implement the high voltage 4H-SiC buffer layer N-IGBT electro-thermal model into the Saber® circuit simulator, the nonlinear functions of the system variables listed in Table I as in [4] and the power MOSFET equations listed in Table II as in [7] are combined.…”

Section: Introductionmentioning

confidence: 99%

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

Duong

Hefner

Ortiz-Rodríguez

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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The purpose of this paper is to present a physicsbased electro-thermal Saber®* model and parameter extraction sequence for high-voltage SiC buffer layer nchannel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and extending the previously developed physics-based silicon buffer layer IGBT electrothermal model and IGBT Model Parameter extrACtion Tools (IMPACT) to include SiC specific device and material properties. The validated simulation results in this paper demonstrate that the new electro-thermal Saber® model for high-voltage SiC buffer layer n-channel IGBTs can be used to describe the static and dynamic behaviors for a wide range of device designs and circuit conditions for IGBTs with blocking voltages from 12 kV to 20 kV. The new physics-based model provides both device and circuit predictive capability.

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“…Wide band gap Semiconductors such as Silicon Carbide (SiC) have demonstrated good characteristics for improving on the limitations associated with the current state of the art technology for power switching devices. SiC devices can provide good performance in application which demand high switching frequencies [1]. SiC devices can also sustain high operating temperatures, thus making them attractive candidates for aerospace applications [2], where the high temperature operation can reduce the weight and volume of the cooling system.…”

Section: Introductionmentioning

confidence: 99%

Comparative performance evaluation of SiC power devices for high temperature and high frequency matrix converter

Safari

Castellazzi

Wheeler

2013

2013 IEEE Energy Conversion Congress and Exposition

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With the commercial availability of SiC JFET and BJT, their acceptance are expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. The objective of this paper is to assess the performance of bidirectional SiC switch devices for matrix converter. Two 2-phase to 1-phase matrix converters are constructed with SiC JFET and BJT. The improved performance of the SiC switch devices is assessed with reference to measured switching waveforms. Furthermore, the effect of two different SiC switch devices on the overall performance of the matrix converter with particular attention to power circuit losses is investigated.

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Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

Cited by 199 publications

References 12 publications

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

Comparative performance evaluation of SiC power devices for high temperature and high frequency matrix converter

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