Silica-coated gold nanorod@CdSeTe ternary quantum dots core/shell structure for fluorescence detection and dual-modal imaging

Assaying of Cu2+ with near‐infrared l‐cysteine‐capped CdSeTe/CdS quantum dots and its effect on cell imaging

“…[ 27 ] Only a few types of NIR QDs, however, such as CuInS 2 /ZnS, [ 28 ] PbS, [ 29 ] and CdSeTe QDs, have been considered as candidates for both bio‐imaging and heavy metal detection. [ 30 ] Recently, there have been many reports on detecting metal ions with carbon QDs, [ 31–33 ] but the overwhelming majority of carbon dots only emit in the blue or green region, which severely limits their application in bio‐imaging. Under current research conditions, attention should be paid to the preparation of QDs with stronger ion detection capabilities and better bio‐imaging effects.…”

Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

“…The results of the η values indicate that the annealing temperature affects both the surface morphology and the solar cell performance. The CdSe 0.6 Te 0.4 sample annealed at 350 • C exhibited the best solar cell performance among the investigated samples because of its highly porous, nanowire-like surface structure, which provides abundant active sites for the separation of charge carriers [30][31][32][33].…”

“…To date, several binary metal chalcogenide photoelectrode materials have been developed into PECs as photoabsorber layers, including CdS [13,14], CdSe [15,16], CdTe [17], ZnS [18], ZnSe [19], and ZnSe/CdSe [20]. Among these binary photoelectrode materials, CdSe and CdTe materials provided band gap values between 1.45 and 1.75 eV [1,[21][22][23][24][25][26][27][28][29][30]; this indicates that the lower band gap energy photoelectrodes provided higher optical absorption. The higher optical absorption of the photoelectrode material provides more electron-hole pairs as well as a higher rate of the recombination rates of charge carriers [21,22].…”

“…The second reason for the selection of the ternary CdSe 0.6 Te 0.4 compounds is to improve the electrical and optical properties of the binary CdSe and CdTe metal chalcogenides. Recently, various co-workers have been working on the CdSe X Te 1−X compounds and finally concluded that the CdSe 0.6 Te 0.4 composition shows better photoelectrochemical properties than the other composition/photoelectrodes [23][24][25][26][27][28][29][30][31].…”

“…Currently, researchers have been using various chemical and physical deposition methods, such as molecular beam epitaxy (MBE) [23,24], chemical vapor [25], hydrothermal [26], radiofrequency sputtering [27], slurry coating [28], non-injection one-pot [29], silicon isolation layer [30], electrodeposition [31], and chemical bath deposition (CBD) [32], to develop ternary CdSe 0.6 Te 0.4 thin films for various applications. Among these methods, the electrodeposition method is simple, rapid, and scalable for preparing ternary CdSe 0.6 Te 0.4 samples [31][32][33][34][35][36][37].…”