2015
DOI: 10.1049/iet-pel.2014.0274
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Sigma‐Z‐source inverters

Abstract: To increase the boost capability with minimum passive components, existing transformer-based Z-source inverter (ZSI) topologies require the turn ratio to be increased. This results in larger transformer windings to be used in high dc-ac voltage gain applications. This shortcoming is addressed in this study by introducing a sigma-ZSI (ΣZSI) that improves the dc-ac voltage gain by reducing the turn ratio leading to a lower winding transformer. The proposed topology is compared with the TZSI as they used the same… Show more

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Cited by 50 publications
(37 citation statements)
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“…Use of ISNs as the main factor of classification is not a benefit due to their spreading high variety. For example, two novel passive ISNs have been proposed recently: L-Z-source [74] and sigma-Z-source [75]. Also, active ISNs are becoming popular [76], [77].…”
Section: A Classification Of Impedance-source Galvanically Isolated mentioning
confidence: 99%
“…Use of ISNs as the main factor of classification is not a benefit due to their spreading high variety. For example, two novel passive ISNs have been proposed recently: L-Z-source [74] and sigma-Z-source [75]. Also, active ISNs are becoming popular [76], [77].…”
Section: A Classification Of Impedance-source Galvanically Isolated mentioning
confidence: 99%
“…During shoot-through state the inductance of winding N 1 is effective, whereas in non-shoot through state both the windings N 1 and N 2 are effective [39]- [41]. By designing this topology, amplitude of the bus voltage can be significantly stepped up and the boost inversion ability of the whole inverter can be significantly improved by 16.5% compared to QZSI. Inheriting the shoot-through time interval of the traditional ZSI the reliability of the whole inverter can be improved.…”
Section: Tapped-inductor Quasi-z-source Inverter (Tl-qzsi)mentioning
confidence: 99%
“…Although the VSI with the boost converter has one more IGBT switch compared to the ZSI, but the power loss in the ZSI structure is significantly higher [7,8]. Accordingly, the efficiency of ZSI structure is lower.…”
Section: Power Loss Problem In the Zsi Structurementioning
confidence: 99%
“…In general, four different types of losses occur in the semiconductor devices including driving, conduction, off-state and switching losses. The driving and off-state losses versus the conduction and switching losses are negligible due to very small values [7].…”
Section: Power Loss Problem In the Zsi Structurementioning
confidence: 99%
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