Sic Materials and Devices

Shur, Michael; Rumyantsev, Sergey; Levinshteǐn, M. E.

doi:10.1142/6134

Cited by 59 publications

(41 citation statements)

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“…They include porous amorphous carbon films, silicon carbide (SiC), silicon nitride, and aluminum nitride and have many important applications. 1 SiC, for example, 2 has high fracture toughness and withstands high temperatures and has many applications, ranging from electronic devices and sensors, to structural materials, automobile parts, and thin filament pyrometry. Biocompatibility, resistance to acidic and alkali environments, and chemical inertness have also made SiC a promising material for fabrication of nanoporous membranes 3 for separation of gas and liquid mixtures in harsh environments.…”

Section: Introductionmentioning

confidence: 99%

First principles-based multiparadigm, multiscale strategy for simulating complex materials processes with applications to amorphous SiC films

Naserifar

Goddard

Tsotsis

et al. 2015

The Journal of Chemical Physics

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Progress has recently been made in developing reactive force fields to describe chemical reactions in systems too large for quantum mechanical (QM) methods. In particular, ReaxFF, a force field with parameters that are obtained solely from fitting QM reaction data, has been used to predict structures and properties of many materials. Important applications require, however, determination of the final structures produced by such complex processes as chemical vapor deposition, atomic layer deposition, and formation of ceramic films by pyrolysis of polymers. This requires the force field to properly describe the formation of other products of the process, in addition to yielding the final structure of the material. We describe a strategy for accomplishing this and present an example of its use for forming amorphous SiC films that have a wide variety of applications. Extensive reactive molecular dynamics (MD) simulations have been carried out to simulate the pyrolysis of hydridopolycarbosilane. The reaction products all agree with the experimental data. After removing the reaction products, the system is cooled down to room temperature at which it produces amorphous SiC film, for which the computed radial distribution function, x-ray diffraction pattern, and the equation of state describing the three main SiC polytypes agree with the data and with the QM calculations. Extensive MD simulations have also been carried out to compute other structural properties, as well the effective diffusivities of light gases in the amorphous SiC film. C 2015 AIP Publishing LLC. [http://dx

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Section: Introductionmentioning

confidence: 99%

First principles-based multiparadigm, multiscale strategy for simulating complex materials processes with applications to amorphous SiC films

Naserifar

Goddard

Tsotsis

et al. 2015

The Journal of Chemical Physics

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“…When the stored charge is less than the critical charge, the DTSCR remains off, as we can see in the case of Vpulse = 20 V (Q = 21nC). Hence, the critical charge Q cr , needed to switch-on the SCR is an intrinsic parameter describing the "sensitivity" of the thyristor [11].…”

Section: Turn-on Time Extraction From Tlp Resultsmentioning

confidence: 99%

“…7. Comparing devices turn-on time performance using stored charge extraction method Based on [11], if the gate current slowly grows, the SCR is turned on at the point where the minority carrier charge density has a maximum and it is equal to the critical charge Q cr represented by:…”

Section: Tcad Simulation: Turn-on Time Extraction From Tlp Resultsmentioning

confidence: 99%

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New triggering-speed-characterization method for diode-triggered SCR using TLP

Mahane

Trémouilles

Bafleur

et al. 2017

Microelectronics Reliability

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The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method, based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements.

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“…It can overcome the ultimate performances reached by Si devices, in terms of power handling, maximum operating temperature and conversion efficiency in power module [4,5]. The unique properties of the 4H-SiC poly-type include high critical electric field (3 MV/cm), large bandgap (3.2 eV), high saturation velocity (2×10 7 cm/s), high thermal conductivity (4.9 W/(cm K)) and good electron mobility (~1000 cm 2 /Vs for //c-axis) [6].…”

Section: Introductionmentioning

confidence: 99%

Diamond / SiC heterojunctions

Mukherjee

Mendes

Alves

et al. 2016

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Abstract-Diamond and SiC are wide bandgap (WBG) materials which can be used to fabricate high power devices with improved performance. The combination of these materials into one single device is expected to bring some benefits, like a better thermal management with a corresponding increase in the operating power. Diamond films deposited by Chemical Vapor Deposition (CVD) can be doped with boron, making them p-type semiconductors. Diamond films deposited on foreign substrates are intrinsically polycrystalline, so the quality of the interface, determined by deposition conditions and seeding method, plays a critical role in the heterojunction characteristics, impacting both reverse current and breakdown voltage. This work reports the fabrication and characterization of p-diamond / n-SiC heterojunctions. P-type polycrystalline diamond (PCD) films were deposited directly on the surface on n-type SiC commercial wafers by Hot Filament CVD (HFCVD) using different seeding techniques. I-V characteristics of the obtained heterojunctions were measured at room temperature and the quality and morphology of the diamond films were assessed by scanning electronic microscopy (SEM) and Raman spectroscopy. The influence of the different seeding techniques on the I-V characteristics is discussed.

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Sic Materials and Devices

Cited by 59 publications

References 0 publications

First principles-based multiparadigm, multiscale strategy for simulating complex materials processes with applications to amorphous SiC films

First principles-based multiparadigm, multiscale strategy for simulating complex materials processes with applications to amorphous SiC films

New triggering-speed-characterization method for diode-triggered SCR using TLP

Diamond / SiC heterojunctions

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