2016 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific) 2016
DOI: 10.1109/itec-ap.2016.7512950
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Cited by 8 publications
(2 citation statements)
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“…High thermal, radiation and chemical stability is due to the high energy of the bond between Si and C which ensures the stability of SiC-based devices under extreme operating conditions [1][2][3][4][5] . Thus, due to these properties, silicon carbide is a promising material for power electronics devices 6 design as well as various microelectromechanical systems (MEMS) widely used in the automotive industry (hybrid and electric cars), energy industry, oil and gas industry, etc [7][8][9][10][11][12][13][14] .…”
mentioning
confidence: 99%
“…High thermal, radiation and chemical stability is due to the high energy of the bond between Si and C which ensures the stability of SiC-based devices under extreme operating conditions [1][2][3][4][5] . Thus, due to these properties, silicon carbide is a promising material for power electronics devices 6 design as well as various microelectromechanical systems (MEMS) widely used in the automotive industry (hybrid and electric cars), energy industry, oil and gas industry, etc [7][8][9][10][11][12][13][14] .…”
mentioning
confidence: 99%
“…Recent research has shown the advantages and disadvantages of the SiC devices. These elements possess better characteristics than silicon devices, such as low switching losses, higher switching frequencies, and higher temperature operation ranges [4][5][6][7][8]. Accordingly, the SiC devices allow for the design of power converters with high-power densities and high efficiencies.…”
Section: Introductionmentioning
confidence: 99%