Si0.5Ge0.5 channel introduction technique for the preparation of high mobility FinFET device

Li, Yongliang; Zan, Ying; Cheng, Xiaohong; Zhao, Fei; Liu, Haoyan; Wang, Wenwu

doi:10.1016/j.mssp.2021.106373

Cited by 3 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…I DS of 421 µA/µm under V DS = V GS = −0.8 V, I ON /I OFF ratio of ∼ 3×10 5 , and SS of 64 mV/dec are obtained. Comparing with the conventional Si 0.7 Ge 0.3 FinFET with optimized electrical performance reported earlier, [16] its SS can be reduced by 24%, improving from 87 mV/dec to 64 mV/dec. These mentioned results indicate that a stronger gate control capability to the Si 0.7 Ge 0.3 channel is attained after adopting a narrowed Si 0.7 Ge 0.3 fin by utilizing a precise cyclic wet treatment process.…”

Section: Narrowed Si 07 Ge 03 Finfet Devicementioning

confidence: 72%

“…The key electrical property of the narrowed Si 0.7 Ge 0.3 FinFET is compared with those of some reported SiGe FinFET/GAA devices. [3,[17][18][19][20][21][22][23] Figure 7 summarizes the SS-I ON /I OFF benchmark of the reported SiGe FinFET/GAA devices. The I ON /I OFF ratio of the narrowed Si 0.7 Ge 0.3 FinFET is higher than the average value of the comparison groups.…”

Section: Narrowed Si 07 Ge 03 Finfet Devicementioning

confidence: 99%

See 1 more Smart Citation

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Liu

Wang

2023

Chinese Phys. B

View full text Add to dashboard Cite

In this work, a narrowed Si0.7Ge0.3 channel FinFET device using a precise cyclic wet treatment process is demonstrated in detail. Si0.7Ge0.3 fin/per side of 0.63nm can be accurately removed in each cycle by utilizing a self-limited oxidation with 40% HNO3 solution for 40 s and oxidation removal with 1% HF solution for 10 s. As a result, after the dummy gate removal, the fin width of Si0.7Ge0.3 can be narrowed from 20nm to 8nm by utilizing 10 cycles of this wet treatment process. Compared with the conventional Si0.7Ge0.3 FinFET under the similar process, the narrowed Si0.7Ge0.3 channel FinFET using this newly developed wet treatment process can realize a stronger gate control capability because its subthreshold slope can be reduced by 24%, improved from 87 to 64 mV/dec.

show abstract

Section: Narrowed Si 07 Ge 03 Finfet Devicementioning

confidence: 72%

Section: Narrowed Si 07 Ge 03 Finfet Devicementioning

confidence: 99%

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Liu

Wang

2023

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…In many previous works, SiGe channel material is mainly used in PMOS rather than NMOS to enhance the hole mobility in PMOS devices [9][10][11]. The layer effects in SiGe channel are also studied [12,13]. The drawback of the SiGe channel in NMOS devices is the electron mobility degradation due to its high interface trap states [14,15], which can be eliminated in technology computer-aided design (TCAD) simulations [16].…”

Section: Introductionmentioning

confidence: 99%

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET

2023

Nanomaterials

View full text Add to dashboard Cite

FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes after the planar MOSFET reached the limit for scaling. The SOI FinFET devices combine the benefits of FinFET and SOI devices, which can be further boosted by SiGe channels. In this work, we develop an optimizing strategy of the Ge fraction in SiGe Channels of SGOI FinFET devices. The simulation results of ring oscillator (RO) circuits and SRAM cells reveal that altering the Ge fraction can improve the performance and power of different circuits for different applications.

show abstract

Vertical diamond Schottky barrier diodes with curved field plates

Li,

Liang,

Chen

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

Diamond Schottky barrier diodes (SBDs) could theoretically operate at high voltage, high temperature, and high frequency and be potentially used in power electronics. However, the device breaks down prematurely and cannot operate stably at high voltages due to the edge electric field crowding. In this work, a vertical diamond SBD with a curved field plate (CFP) was prepared using a chemical reflow method, inductively coupled plasma etching, and electron-beam evaporation. This structure alleviates the electric field crowding at the edge of the Schottky electrode and results in a breakdown voltage and current density of 380 V and over 3000 A/cm2, respectively. After repetitive measurements, we found that the device can repeatedly breakdown at around 380 V. These results indicate that CFP structure diamond SBDs have great application in high-voltage and high-power electronic devices.

show abstract

Si0.5Ge0.5 channel introduction technique for the preparation of high mobility FinFET device

Cited by 3 publications

References 8 publications

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET

Vertical diamond Schottky barrier diodes with curved field plates

Contact Info

Product

Resources

About

Si0.5Ge0.5 channel introduction technique for the preparation of high mobility FinFET device

Cited by 3 publications

References 8 publications

Narrowed Si0.7Ge0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Narrowed Si0.7Ge0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET

Vertical diamond Schottky barrier diodes with curved field plates

Contact Info

Product

Resources

About

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process