DOI: 10.1109/itec-ap.2014.6941032
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Abstract: This paper characterizes and compares Si and SiC power MOSFETs in high temperature conditions. The superior advantages of SiC power device, including conductivity, breakdown voltage, high switching speed and high temperature operating potentials, are discussed based on the semiconductor physics properties, including bandgap energy, critical electric field, saturation velocity and thermal conductivity.In characterization of the power devices, the device threshold voltage, on-resistance and leakage current are …

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