Shubnikov-de Haas oscillations in a two-dimensional electron gas in a spatially random magnetic field

Mancoff, F. B.; Zielinski, L. B.; Marcus, C. M.; Campman, K. L.; Gossard, A. C.

doi:10.1103/physrevb.53.r7599

Cited by 31 publications

(19 citation statements)

References 35 publications

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“…1,2 This 2DEG can be laterally confined and patterned to achieve new functionalities such as oxide-based field-effect transistors. 3,4 In view of the remarkable phenomena observed in the conventional 2DEG under a magnetic field, including the Shubnikov-de Hass (SdH) effect, 5,6 and the spin and charge Hall effect 7 in the presence of spin-orbit interactions (SOI), 8,9 it is timely to consider the properties of oxide-based 2DEGs in a magnetic field. Generally, the relatively large effective mass m * together with a high carrier concentration N e at the oxide interfaces (for instance, m * /m e ≈ 3.2, with m e being the free electron mass and N e ≈ (5-9) × 10 13 cm −2 at the LaAlO 3 /SrTiO 3 interface 10 ) imply a strong magnetic field for the SdH oscillation and for the quantized Hall conductance to be observable.…”

Section: Introductionmentioning

confidence: 99%

Magnetotransport and spin dynamics in an electron gas formed at oxide interfaces

Jia¹,

Berakdar²

2011

Phys. Rev. B

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We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at the interface between two oxides in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with collinear or spiral magnetic and ferroelectric order. For spiral multiferroic oxides, the magnetoelectric coupling and the topology of the localized magnetic moments introduce additional, electric-field-controlled spin-orbit coupling that affects the magneto-oscillation of the current. An interplay of this spin-orbit coupling, the exchange field, and the applied magnetic field results in a quantum, gate-controlled spin and charge Hall conductance.

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Section: Introductionmentioning

confidence: 99%

Magnetotransport and spin dynamics in an electron gas formed at oxide interfaces

Jia¹,

Berakdar²

2011

Phys. Rev. B

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“…This oscillation is the well-known Shubnikov-de-Haas effect. The difference in the extrema of the oscillations as a function of magnetic field decays exponentially as the field is decreased 19,20 . The cyclotron frequency can be obtained by observing the characteristic energy scale with which this decay occurs.…”

Section: Discussionmentioning

confidence: 99%

Theory of electron-phonon interaction in a nonequilibrium open electronic system

Takei

Kim

2007

Phys. Rev. B

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We study the effects of time-independent nonequilibrium drive on an open 2D electron gas system coupled to 2D longitudinal acoustic phonons using the Keldysh path integral method. The layer electron-phonon system is defined at the two-dimensional interface between a pair of threedimensional Fermi liquid leads, which act both as a particle pump and an infinite bath. The nonequilibrium steady state is achieved in the layer by assuming the leads to be thermally equilibrated at two different chemical potentials. This subjects the layer to an out-of-plane voltage V and drives a steady-state charge current perpendicular to the system. We compute the effects of small voltages (V ≪ ωD) on the in-plane electron-phonon scattering rate and the electron effective mass at zero temperature. We also find that the obtained nonequilibrium modification to the acoustic phonon velocity and the Thomas-Fermi screening length reveal the possibility of tuning these quantities with the external voltage.

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“…ω c = eB tot /m * denotes the cyclotron frequency and m * the effective electron mass. 27 Figure 11 demonstrates the Dingle plots for the flat sample (a) and for the curved samples (b) and (c). These graphs present the function ln( ρ extr /[4ρ xx (0)f ]) plotted versus 1/B.…”

Section: B Phase Cancellation Of the Sdh Oscillationsmentioning

confidence: 97%

Inhomogeneous microstrain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

et al. 2012

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We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As microtubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is established. The layer thickness fluctuation studied by atomic force microscopy, x-ray scattering, and spatially resolved cathodoluminescence spectroscopy occurs on two different lateral length scales. On the shorter length scale of about 0.01 μm, we found from atomic force micrographs and the broadening of the satellite maxima in x-ray diffraction curves a very small value of the mean square roughness of 0.1 nm. However, on a longer length scale of about 1.0 μm, step bunching during epitaxial growth resulted in layer thickness inhomogeneities of up to 2 nm. The resulting fluctuation of the strain in the microtubes leads to a local variation of the chemical potential, which results in the fluctuation of the carrier density as well. This leads to a phase cancellation of the Shubnikov-de Haas oscillations in the curved HM2DEG and a reduction of the single-electron scattering time, while the electron mobility in the structures remains high. The estimated fluctuation of the carrier density agrees well with the energy fluctuation measured in the cathodoluminescence spectra of the free-electron transition of the quantum well.

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Shubnikov-de Haas oscillations in a two-dimensional electron gas in a spatially random magnetic field

Cited by 31 publications

References 35 publications

Magnetotransport and spin dynamics in an electron gas formed at oxide interfaces

Magnetotransport and spin dynamics in an electron gas formed at oxide interfaces

Theory of electron-phonon interaction in a nonequilibrium open electronic system

Inhomogeneous microstrain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

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