Shear Modulation Force Microscopy Study of Near Surface Glass Transition Temperatures

Ge, Shouren; Pu, Yong‐Jin; Zhang, W.; Rafailovich, Miriam; Sokolov, J.; Buenviaje, Cynthia; Buckmaster, Ryan; Overney, René M.

doi:10.1103/physrevlett.85.2340

Cited by 278 publications

(245 citation statements)

References 29 publications

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“…The consistency of our results has been checked by independent measurements, which exploit the shear modulation technique introduced by Ge et al [26]. Similarly to the thermal activation, we externally activate the jumps by applying lateral oscillations to the cantilever holder while sliding on mica.…”

Section: -2mentioning

confidence: 99%

Interaction Potential and Hopping Dynamics Governing Sliding Friction

et al. 2003

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The friction force on a nanometer-sized tip sliding on a surface is related to the thermally activated hopping of the contact atoms on an effective atomic interaction potential. A general analytical expression relates the height of this potential and the hopping attempt frequency to measurements of the velocity dependence of the friction force performed with an atomic force microscope. While the height of the potential is roughly proportional to the normal load, the attempt frequency falls in the range of mechanical eigenfrequencies of the probing tip in contact with the surface.

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Section: -2mentioning

confidence: 99%

Interaction Potential and Hopping Dynamics Governing Sliding Friction

et al. 2003

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“…22 Like normal modulation techniques ͑e.g., perpendicular to sample normal͒, lateral modulation of the sample in the AFM can be used to map sample inhomogeneities like defects 12 or friction contrast, 24 as well as glass transition temperatures. 25 If great care is taken, quantitative stiffness images can be obtained; 26 however, potential frictional contributions due to slip, as well as cantilever issues ͑e.g., matching cantilever and sample stiffnesses, and lateral force calibration difficulties͒ limit the technique.…”

Section: Introductionmentioning

confidence: 99%

Quantitative imaging of nanoscale mechanical properties using hybrid nanoindentation and force modulation

Asif

Wahl

Colton

et al. 2001

Journal of Applied Physics

237

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In this article, we present a quantitative stiffness imaging technique and demonstrate its use to directly map the dynamic mechanical properties of materials with nanometer-scale lateral resolution. For the experiments, we use a ''hybrid'' nanoindenter, coupling depth-sensing nanoindentation with scanning probe imaging capabilities. Force modulation electronics have been added, enhancing instrument sensitivity and enabling measurements of time dependent materials properties ͑e.g., loss modulus and damping coefficient͒ not readily obtained with quasi-static indentation techniques. Tip-sample interaction stiffness images are acquired by superimposing a sinusoidal force ͑ϳ1 N͒ onto the quasi-static imaging force ͑1.5-2 N͒, and recording the displacement amplitude and phase as the surface is scanned. Combining a dynamic model of the indenter ͑having known mass, damping coefficient, spring stiffness, resonance frequency, and modulation frequency͒ with the response of the tip-surface interaction, creates maps of complex stiffness. We demonstrate the use of this approach to obtain quantitative storage and loss stiffness images of a fiber-epoxy composite, as well as directly determine the loss and storage moduli from the images using Hertzian contact mechanics. Moduli differences as small as 20% were resolved in the images at loads two orders of magnitude lower than with indentation, and were consistent with measurements made using conventional quasi-static depth-sensing indentation techniques.

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“…Any surface effects less than 1 nm in depth [44] cannot be addressed under these conditions. The slow creeping process above T g is documented elsewhere [45]. While the accuracy of SM-FM T g measurements compares well with other techniques [46], Fig.…”

Section: Amplitude Response Contains Modulus and Contact Informationmentioning

confidence: 75%

“…It has been recognized that several factors are intricately responsible for the departure of T g in ultrathin films, from the bulk value [27,44,45,[95][96][97][98][99]; e.g. the proximity of a free surface, substrate interactions, and process-induced anisotropy.…”

Section: Interfacial Glass Transition Profilesmentioning

confidence: 99%