DOI: 10.1109/isscc.1982.1156340
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Abstract: The remarkable improvements in the performance and packing density of integrated circuits during the past two decades have been paced by advances in device structures and technology. This trend continues as we enter the era of VLSI. For example, structures which minimize deleterious short-channel effects in MOS devices, coupled with advances in projection lithography and dry etching, have made it possible to fabricate integrated circuits with over 100,000 transistors per chip and with electrical channel lengt…

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