DOI: 10.1109/isscc.1978.1155873
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Abstract: The development of microwave solid-state amplifiers with greater than octave bandwidths, large dynamic range, exceflent noise performance and high efficiency has been the goal of researchers for many years. This frontier has been partially realized in the last few years with the remarkable advances in the device performance of the micrswave GaAs FET. A comprehensive overview of both the progress made in the development of GaAs FET devices and associated circuitry, as well as problems remaining to be solved be…

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