DOI: 10.1109/isscc.1980.1156140
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Abstract: The last few years have seen increasing interest in both digital and microwave (analog) monolithic integrated circuits on GaAs. These exciting developments have been made possible by the superior high-frequency semiconducting properties of GaAs, the existence of semi-insulating GaAs -an excellent dielectric for the definition of passive elements such as microwave transrriission lines and low-loss interconnects-and the ubiquitous GaAs field-effect transistor. The GaAs FET has been used for ultra-high-speed swi…

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