Sensivity analysis of impact ionization coefficients in an electronic device

Abstract

Terminal current in a device increases when energetic carriers create additional carriers by impact ionization. Okuto and Crowell suggested an empirical model for describe this phenomenon. In this paper, Monte Carlo techniques were used to observe the effect of variability in the impact ionization coefficients on the results obtained from a computational model for electrons and holes transport. The model was implemented in FEM simulation tool, in order to study avalanche current in a MOSFET including uncertainty of the impact ionization coefficients of material.