DOI: 10.31219/osf.io/uv8ka
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Roberto Köferstein

Abstract: The electrical and optical properties of Ge-doped BaSnO3 ceramics sintered at varioustemperatures have been investigated to determine their semiconductor behavior. The electricalconductivity of Ge-doped BaSnO3 samples increases with increase in temperature, confirmingthat the samples exhibit a semiconductor behavior. A maximum conductivity value of6.31 × 10−9 S/cm was observed for the sample sintered at 1200 °C. The optical band gaps ofthe Ge-doped BaSnO3 samples were determined by means of reflectance spectra…

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