Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite

Benyahia, K.; Djeffal, F.; Ferhati, H.; Bendjerad, A.; Benhaya, A.; Saidi, A.

doi:10.1016/j.jallcom.2020.158242

Cited by 57 publications

(19 citation statements)

References 44 publications

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“…By contrast, our preparation technique is low cost and easy to operate as compared to the conventional techniques and can be scaled up to produce large amounts of V 2 O 5 samples. Meanwhile, metal semiconductor–metal (MSM)-based photodetectors are widely used in emerging communication systems due to their unique structure [ 48 , 49 , 50 ]. Therefore, we fabricated the MSM photodetector based on 2D V 2 O 5 nanosheets film and studied its optoelectronic properties systematically.…”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

Wang

Zhang

et al. 2022

Materials

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Most of the studies focused on V2O5 have been devoted to obtaining specific morphology and microstructure for its intended applications. Two dimensional (2D) V2O5 has the most valuable structure because of its unique planar configuration that can offer more active sites. In this study, a bottom-up and low-cost method that is hydrothermal combined with spin-coating and subsequent annealing was developed to prepare 2D V2O5 nanosheets film on quartz substrate. First, VOOH nanosheets were prepared by the hydrothermal method using V2O5 powders and EG as raw materials. Further, V2O5 nanosheets with an average lateral size over 500 nm and thickness less than 10 nm can be prepared from the parent VOOH nanosheets by annealing at 350 °C for 15 min in air. The prepared V2O5 nanosheets film was assembled of multiple nanosheets. The structural, morphological, microstructural and optical properties of the films were respective investigated by XRD, SEM, TEM and UV-Vis. The photodetector based on V2O5 nanosheets film shows good photoresponse with a response time of 2.4 s and a recovery time of 4.7 s.

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Section: Introductionmentioning

confidence: 99%

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

Wang

Zhang

et al. 2022

Materials

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“…In 2021, Benyahia et al demonstrated a broadband multispectral photodetector that exhibited a high UV-vis-NIR photoresponse. 124 Furthermore, the sensitive device composed of ZnO/ZnS heterostructures also achieves an apparent photovoltaic effect with UV, visible and NIR photocurrent values of 0.7, 0.2 and 0.1 μA at V = 0 V, respectively (Fig. 9d).…”

Section: Ii–vi Group Semiconductor Based Uv Photodetectors and Applic...mentioning

confidence: 90%

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

et al. 2022

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“…The illuminated device's I-V curves are converted to 0.15V for negative voltage value, showing its asymmetric photoelectric behavior. The gained photoelectrical characteristic could be ascribed to the potential barrier-induced ZnO-ZnS heterostructure [93]. Fatemeh et al [94] showed the photocurrent of different voltage characteristics of Ni -ZnO doping nanostructure due to the various Ni concentrations from (−10 V to 10 V) in the dark with UV illumination at (350 nm, 15.5 mW/cm2).…”

Section: The Photoresponse Properties Of Znomentioning

confidence: 99%

“…photodetector[93]. In the same year, Fatemeh et al studied high photoresponse UV photodetector based on Ni-ZnO doping Ns, where doped Ni-ZnO Ns prepared by using by thermal decomposition technique, ZnO and Ni-ZnO optoelectronic properties have been assessed in Figure 4(e) shown impact of Ni dopant concentration on the ZnO and Ni-doped ZnO nanoparticle spectrum of UV-Vis In the (300-700) nm range of wavelengths.…”

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confidence: 99%

Review of Optoelectronic Properties of ZnO Photodetector

WASMAN

HAMADAMEEN

2022

Journal of Physical Chemistry and Functional Materials

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Photodetection has been gained a lot of attention in last years biased on military wide range and civil application. With essential properties of Zno which has the wide band gap, strong radiation hardness, low cost and good chemical stabilities. ZnO are considered as the most successful candidate for UV photodetector. The study of our report is to review photodetectors based on doped Zno nanostructures and the new advances in ZnO nanostructured generation technique including adjustment and doping methods with modifications of ZnO photodetector. Final part of this review is about literature reviews were reported in recent years about optoelectrical property of Zno nanostructures, due to the fact that Zinc oxide is an important semiconductor material for optoelectronic and industrial applications, such solar cell, photosensors and photodetectors.

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Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite

Cited by 57 publications

References 44 publications

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Review of Optoelectronic Properties of ZnO Photodetector

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