Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Fukatsu, S.; Fujita, Ken; Yaguchi, Hiroyuki; Shiraki, Y.; Ito, Ryoichi

doi:10.1063/1.106412

Cited by 222 publications

(77 citation statements)

References 14 publications

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“…This result should be related to the diffusion length of Ge in Si, in particular because the presence of strain enhances the interdiffusion process producing an intermixing of about 3-4 ML [34]. In fact, at the growth temperature of our samples, the diffusion length is about 1.1 nm [35,36] which agrees very well with the measured (12 ± 2) nm Six Ge1-x layers thickness. This diffusion length produces a broadening of the nominal pure Ge layer (Tab.…”

Section: Discussionsupporting

confidence: 79%

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Carlino

Giannini

Tapfer

et al. 1995

Microsc. Microanal. Microstruct.

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Abstract. 2014 In this work we investigate the strain-relief mechanisms and the formation of structural defects of Si/Ge multilayers grown by molecular beam epitaxy on (100)-Si substrates. The investigated specimens differ in number of periods, period thickness, and in the Si/Ge layer thickness ratio. The structural analyses are performed by transmission electron microscopy and high-resolution X-ray diffraction. We found that a Si-Ge interdiffusion induces a broadening of the nominal thickness of the Ge layer, producing a Six Ge1-x alloy as well as a higher Ge content in the last periods of the multilayer structure. Our measurements suggest that the strain relaxation occurs in two steps: i) in each period of the multilayer the strain energy density is partially reduced by the formation of coherent islands; ii) at a certain value of the strain energy density, the shape of the coherent islands changes and the structures, partially or completely, relax the accumulated strain energy by nucleation of dislocations. The increase of the strain energy density is related to the measured monotonic increase of the Ge content as a function of the growth time.

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Section: Discussionsupporting

confidence: 79%

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Carlino

Giannini

Tapfer

et al. 1995

Microsc. Microanal. Microstruct.

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“…Increasing the AsH 3 flow rate results in low growth rates and a rough surface because of the passivation of the growth surface by the segregated As atoms [11][12][13][14][15][16]. However, we were able to grow highly As-doped films at a high growth rate by increasing the growth pressure to AP.…”

Section: Growth Mechanismmentioning

confidence: 75%

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Ikuta

Miyanami²,

Fujita³

et al. 2007

Science and Technology of Advanced Materials

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Selective epitaxial Si with a high arsenic concentration of 2.2 Â 10 19 atoms/cm 3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride. r

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“…At the same time a more chemically justified model of segregation, initially verified for SiGe alloys, was presented by Fukatsu et al 71 and Fujita et al 72 The same method, known generally as the kinetic model of segregation, was extended to exchanges of group III atoms in III-V alloys by Dehaese et al 73 In the kinetic model of segregation the process of diffusion is assumed to occur only between the growing layer and the one immediately below while all the other layers ͑bulk͒ are considered to be frozen. The evolution of the number of In surface atoms is given by the balance of incoming and leaving In or Ga atoms,…”

Section: Segregation In Epitaxial Layersmentioning

confidence: 99%

“…The previous models of segregation are based on the twostate exchange 70,71,73 mechanism, where only atomic exchange among the subsurface and surface states is considered. Godbey and Ancona 75 instead proposed to extend the kinetic model to a three-layer exchange mechanism.…”

Section: ͑6͒mentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

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Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Cited by 222 publications

References 14 publications

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

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