Self-heating of stressed VDMOS devices under specific operating conditions

Veljković, S.; Mitrović, N.; Jovanović, I.; Živanović, E.; Paskaleva, A.; Spassov, D.; Mančić, D.; Danković, D.

doi:10.1016/j.microrel.2023.115213

Cited by 1 publication

(2 citation statements)

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“…Previous research and the existing literature have shown that devices that have been stressed in the past are more likely to experience self-heating compared to new samples [49]. It was also proved that larger changes have been recorded in static than in the pulsed NBTstressed components.…”

Section: Self-heating Under Real Operating Conditionsmentioning

confidence: 78%

“…Temperature rose during each edge's duration and decreased towards thermal balance during the off-state. The temperature increased steadily with an increased number of pulses [49]. Additionally, in PMOS transistors, already stressed samples showed changes in threshold voltage, with an increase in the absolute threshold voltage value.…”

Section: Self-heating Under Real Operating Conditionsmentioning

confidence: 94%

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A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

Živanović,

Veljković,

Mitrović

et al. 2024

Micromachines

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This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress conditions and annealing processes to analyze the impacts of BT stress on the formation of oxide trapped charge and interface traps, leading to threshold voltage shifts. Findings revealed meaningful threshold voltage shifts in both PMOS and NMOS devices due to stresses, and the subsequent annealing process was analyzed in detail. The study also examined the influence of stress history on self-heating behavior under real operating conditions. Additionally, the study elucidated the complex correlation between stress-induced degradation and device reliability. The insights contribute to optimizing the performance and permanence of VDMOS transistors in practical applications, advancing semiconductor technology. This study underscored the importance of considering stress-induced effects on device reliability and performance in the design and application of VDMOS transistors.

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Section: Self-heating Under Real Operating Conditionsmentioning

confidence: 78%

Section: Self-heating Under Real Operating Conditionsmentioning

confidence: 94%